18099952. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hong-Chih Chen of Changhua (TW)

Chun-Sheng Liang of Changhua (TW)

Yu-San Chien of Hsinchu (TW)

Wei-Chih Kao of Taipei (TW)

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18099952 titled 'SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Simplified Explanation

The semiconductor device structure described in the abstract includes a unique configuration of semiconductor layers, gate electrode layers, gate bridge contact, and gate via contact. Here are some key points to explain the innovation:

• The structure consists of vertically stacked first and second semiconductor layers extending outwardly from opposite sides of a dielectric wall.
• A first gate electrode layer surrounds the first semiconductor layers, while a second gate electrode layer surrounds the second semiconductor layers.
• The first gate electrode layer has a conductivity type opposite to the second gate electrode layer.
• A gate bridge contact is positioned on the dielectric wall, and a gate via contact is placed on the gate bridge contact.

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1. 1. 1. Potential Applications of this Technology

1. Advanced semiconductor devices for high-performance electronics. 2. Power-efficient integrated circuits for mobile devices and computers.

1. 1. 1. Problems Solved by this Technology

1. Improved control and efficiency in semiconductor devices. 2. Enhanced performance and reliability of electronic components.

1. 1. 1. Benefits of this Technology

1. Increased speed and functionality of electronic devices. 2. Reduction in power consumption and heat generation.

1. 1. 1. Potential Commercial Applications of this Technology
         1. Optimizing Semiconductor Device Structures for Enhanced Performance

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1. 1. 1. Possible Prior Art

There may be prior art related to semiconductor device structures with similar configurations of semiconductor layers and gate electrode layers. However, specific examples would require further research to identify.

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1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this semiconductor device structure compare to existing technologies in terms of performance and efficiency?

The article does not provide a direct comparison with existing technologies, leaving room for further analysis and evaluation.

1. 1. 1. 1. What are the specific manufacturing processes involved in creating this semiconductor device structure?

The manufacturing processes for implementing this innovative structure are not detailed in the abstract, raising questions about the practical implementation of the technology.

Original Abstract Submitted

A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall. The structure also includes a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type. The structure further includes a gate bridge contact disposed on the first dielectric wall, and a gate via contact disposed on the gate bridge contact.