18096663. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Seungmin Song of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18096663 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device with a specific structure and configuration. Here is a simplified explanation of the abstract:
- The semiconductor device has an active pattern on a substrate, which extends in a parallel direction to the upper surface of the substrate.
- A gate structure is present on the active pattern, extending in a direction perpendicular to the active pattern and crossing it.
- Channels are spaced apart from each other in a direction perpendicular to the upper surface of the substrate, and they extend through the gate structure.
- A source/drain layer is located on a portion of the active pattern adjacent to the gate structure, and it makes contact with the channels.
- Sacrificial patterns are present on the upper surface of the active pattern's edges in the direction perpendicular to the gate structure. These sacrificial patterns are in contact with the lower portion of the source/drain layer's sidewall and are made of silicon-germanium.
Potential applications of this technology:
- Semiconductor devices with improved performance and functionality.
- Enhanced integration of components in electronic devices.
- More efficient and reliable operation of semiconductor devices.
Problems solved by this technology:
- Improved channel formation and control in semiconductor devices.
- Enhanced contact between the source/drain layer and the channels.
- Reduction of unwanted effects and interference in the device's operation.
Benefits of this technology:
- Higher performance and functionality in semiconductor devices.
- Improved reliability and efficiency.
- Enhanced integration capabilities for electronic devices.
Original Abstract Submitted
A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.
