18095336. THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF simplified abstract (Yangtze Memory Technologies Co., Ltd.)

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

Organization Name

Yangtze Memory Technologies Co., Ltd.

Inventor(s)

Kun Zhang of Wuhan (CN)

Yuancheng Yang of Wuhan (CN)

Wenxi Zhou of Wuhan (CN)

Zhiliang Xia of Wuhan (CN)

Dongxue Zhao of Wuhan (CN)

Tao Yang of Wuhan (CN)

Lei Liu of Wuhan (CN)

Di Wang of Wuhan (CN)

Zongliang Huo of Wuhan (CN)

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18095336 titled 'THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

The abstract of this patent application describes the fabrication of three-dimensional (3D) memory devices, including a structure with different types of memory cells and peripheral circuits stacked vertically.

• Key Features and Innovation:
• - 3D memory device with multiple semiconductor structures stacked vertically
• - Arrays of different types of memory cells in separate semiconductor structures
• - First and second peripheral circuits integrated into the device
• - Fabrication method for creating complex 3D memory structures

Potential Applications: This technology could be used in high-density memory storage applications, such as in data centers, servers, and other computing devices where efficient memory management is crucial.

Problems Solved: This innovation addresses the challenge of increasing memory storage capacity in a compact form factor by utilizing vertical stacking of semiconductor structures.

Benefits:

• - Higher memory density in a smaller footprint
• - Improved memory access speeds and data transfer rates
• - Enhanced overall performance of memory-intensive applications

Commercial Applications: This technology has the potential to revolutionize the memory storage industry by offering more efficient and compact solutions for data storage in various electronic devices.

Questions about 3D Memory Devices: 1. How does the vertical stacking of semiconductor structures improve memory storage capacity? 2. What are the key differences between the first and second type memory cells in this 3D memory device?

Frequently Updated Research: Researchers are constantly exploring new materials and fabrication techniques to further enhance the performance and efficiency of 3D memory devices. Stay updated on the latest advancements in this field for potential future applications and improvements.

Original Abstract Submitted

Three-dimensional (3D) memory devices and fabricating methods are disclosed. A disclosed 3D memory device can comprises, a first semiconductor structure comprising an array of first type memory cells, a second semiconductor structure comprising an array of second type memory cells different from the first type memory cells, a third semiconductor structure comprising a first peripheral circuit, and a fourth semiconductor structure comprising a second peripheral circuit. The third semiconductor structure and the fourth semiconductor structure are sandwiched between the first semiconductor structure and the second semiconductor structure in a vertical direction.