18094351. ARTIFICIAL NEURAL NETWORK CIRCUIT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

ARTIFICIAL NEURAL NETWORK CIRCUIT

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jae-Joon Kim of Pohang-si (KR)

Hyungjun Kim of Pohang-si (KR)

Yulhwa Kim of Daegu (KR)

ARTIFICIAL NEURAL NETWORK CIRCUIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18094351 titled 'ARTIFICIAL NEURAL NETWORK CIRCUIT

Simplified Explanation

The abstract describes an artificial neural network circuit that includes memory cells for storing weight data and thresholds, as well as pass transistors for transferring the stored values. The circuit also includes a column for connecting the memory cells and a sense amplifier for processing the output signal.

• The circuit includes unit weight memory cells and unit threshold memory cells.
• The weight memory devices store weight data, while the threshold memory device stores a threshold value.
• The weight-threshold column connects the unit weight memory cells and unit threshold memory cells.
• The sense amplifier receives the output signal of the weight-threshold column and a reference voltage.

Potential applications of this technology:

• Artificial intelligence systems
• Machine learning algorithms
• Pattern recognition systems
• Data analysis and processing

Problems solved by this technology:

• Efficient storage and retrieval of weight data and thresholds in neural networks
• Accurate processing of output signals in neural network circuits

Benefits of this technology:

• Improved performance and accuracy in artificial neural networks
• Enhanced efficiency in memory utilization
• Faster processing and response times in neural network circuits

Original Abstract Submitted

Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.