18094255. Self-Mixing Interference Device for Sensing Applications simplified abstract (Apple Inc.)
Self-Mixing Interference Device for Sensing Applications
Organization Name
Inventor(s)
Arnaud Laflaquiere of Paris (FR)
Chin Han Lin of Santa Clara CA (US)
Keith Lyon of San Jose CA (US)
Marc A. Drader of Waterloo CA (US)
Weiping Li of Pleasanton CA (US)
Self-Mixing Interference Device for Sensing Applications - A simplified explanation of the abstract
This abstract first appeared for US patent application 18094255 titled 'Self-Mixing Interference Device for Sensing Applications
Simplified Explanation
The patent application describes self-mixing interferometry (SMI) sensors that utilize vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). These sensors are used for various applications such as distance measurement, velocity measurement, and vibration sensing.
- VCSEL diodes and RCPDs are used in the SMI sensors.
- The VCSEL diodes and RCPDs are formed from a common set of semiconductor layers epitaxially formed on a common substrate.
- In some cases, a VCSEL diode and an RCPD are laterally adjacent to each other.
- In other cases, a first and a second VCSEL diode are laterally adjacent, and an RCPD is formed on the second VCSEL diode.
- The VCSEL diodes may include two quantum well layers with a tunnel junction layer between them.
- The RCPDs can be vertically integrated with the VCSEL diodes.
Potential Applications
The technology described in this patent application has various potential applications, including:
- Distance measurement
- Velocity measurement
- Vibration sensing
Problems Solved
The patent application addresses several problems in the field of self-mixing interferometry sensors, such as:
- Complex and costly sensor designs
- Limited integration capabilities of VCSEL diodes and RCPDs
- Inefficient coupling between the laser and photodetector components
Benefits
The technology described in the patent application offers several benefits, including:
- Simplified sensor design
- Cost-effective manufacturing process
- Improved integration capabilities of VCSEL diodes and RCPDs
- Enhanced coupling efficiency between the laser and photodetector components
Original Abstract Submitted
Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.
