18091211. 2D NANORIBBONS UTILIZING SILICON SCAFFOLDING simplified abstract (Intel Corporation)

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

Organization Name

Intel Corporation

Inventor(s)

Carl H. Naylor of Portland OR (US)

Kirby Maxey of Hillsboro OR (US)

Kevin O’brien of Portland OR (US)

Chelsey Dorow of Portland OR (US)

Sudarat Lee of Hillsboro OR (US)

Ashish Verma Penumatcha of Beaverton OR (US)

Uygar Avci of Portland OR (US)

Matthew Metz of Portland OR (US)

Scott B. Clendenning of Portland OR (US)

Chia-Ching Lin of Portland OR (US)

Ande Kitamura of Portland OR (US)

Mahmut Sami Kavrik of Eugene OR (US)

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18091211 titled '2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

The abstract describes a transistor structure with nanoribbons containing silicon, transition metal, and chalcogen elements, along with a gate structure and contact regions.

• Nanoribbons span between terminals of the transistor
• Ends of nanoribbons consist of silicon
• Channel regions between ends contain transition metal and chalcogen
• Gate structure includes insulator and gate electrode material
• Contact regions are formed by modifying channel regions with dopants or altering crystal structure

Potential Applications: - Advanced electronic devices - Integrated circuits - Nanotechnology research

Problems Solved: - Enhancing transistor performance - Improving conductivity and efficiency

Benefits: - Increased functionality of electronic devices - Enhanced performance of integrated circuits

Commercial Applications: - Semiconductor industry - Electronics manufacturing - Research and development in nanotechnology

Questions about Transistor Structure: 1. How does the inclusion of transition metal and chalcogen elements impact the performance of the transistor? 2. What are the potential challenges in scaling up the production of nanoribbon-based transistor structures?

Frequently Updated Research: - Ongoing studies on optimizing the design and materials used in nanoribbon transistors for improved performance and efficiency.

Original Abstract Submitted

A transistor structure includes a stack of nanoribbons spanning between terminals of the transistor. Ends of the nanoribbons include silicon, and channel regions between the ends include a transition metal and a chalcogen. A gate structure over the channel regions includes an insulator between the channel regions and a gate electrode material. Contact regions may be formed by modifying portions of the channel regions by adding a dopant to, or altering the crystal structure of, the channel regions. The transistor structure may be in an integrated circuit device.