18090931. MEMORY DEVICES AND METHODS FOR FORMING THE SAME simplified abstract (Yangtze Memory Technologies Co., Ltd.)

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

Organization Name

Yangtze Memory Technologies Co., Ltd.

Inventor(s)

Di Wang of Wuhan (CN)

Lei Liu of Wuhan (CN)

Yuancheng Yang of Wuhan (CN)

Wenxi Zhou of Wuhan (CN)

Kun Zhang of Wuhan (CN)

Tao Yang of Wuhan (CN)

Dongxue Zhao of Wuhan (CN)

Zhiliang Xia of Wuhan (CN)

Zongliang Huo of Wuhan (CN)

MEMORY DEVICES AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18090931 titled 'MEMORY DEVICES AND METHODS FOR FORMING THE SAME

The memory device described in the patent application consists of an array of memory cells on one side of a semiconductor layer, with a peripheral circuit connected to the memory cells. Each memory cell includes a semiconductor body, first and second terminals at each end of the body, word lines, plate lines, and a dielectric layer between the semiconductor body and the word and plate lines.

• Memory device with memory cells and peripheral circuit
• Memory cells with semiconductor bodies, terminals, word lines, plate lines, and dielectric layers
• Array of memory cells on one side of a semiconductor layer
• Peripheral circuit connected to the memory cells
• Efficient and compact memory storage design

Potential Applications: - Data storage devices - Embedded memory in electronic devices - Computer memory systems

Problems Solved: - Improved memory cell design for better performance - Enhanced data storage capabilities - Efficient use of semiconductor materials

Benefits: - Higher memory storage capacity - Faster data access speeds - Reduced power consumption

Commercial Applications: Title: Advanced Memory Devices for Enhanced Data Storage This technology can be utilized in various commercial applications such as smartphones, laptops, servers, and other electronic devices requiring memory storage solutions. The compact design and improved performance make it ideal for the consumer electronics market.

Questions about Memory Devices: 1. How does the design of memory cells impact the overall performance of the memory device? The design of memory cells, including the semiconductor body, terminals, and dielectric layers, directly affects the speed and efficiency of data storage and retrieval in the memory device.

2. What are the potential challenges in implementing this memory device technology in real-world applications? Implementing this memory device technology may face challenges related to manufacturing processes, integration with existing systems, and scalability for mass production.

Original Abstract Submitted

A memory device includes an array of memory cells disposed on a first side of a first semiconductor layer, and a peripheral circuit bonded to the array of memory cells. Each of the memory cells includes a semiconductor body extending in a first direction, a first terminal and a second terminal are formed at both ends of the semiconductor body; a word line extending in a second direction perpendicular to the first direction; plate lines extending in the second direction; and a first dielectric layer disposed between the semiconductor body and the word line and the plate line.