18090087. THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Yangtze Memory Technologies Co., Ltd.)
Contents
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Yangtze Memory Technologies Co., Ltd.
Inventor(s)
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18090087 titled 'THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation:
The semiconductor device described in the abstract consists of multiple decks, each containing alternating word line layers and insulating layers. Each deck includes two first gate line slit (GLS) structures and a second GLS structure positioned between them. The GLS structures cut through the word line layers and insulating layers in an X-Z plane. Some decks have multiple sub-GLS structures that are separate from each other.
- The semiconductor device has multiple decks with alternating word line and insulating layers.
- Each deck contains two first GLS structures and a second GLS structure.
- The GLS structures cut through the layers in an X-Z plane.
- Some decks have multiple sub-GLS structures that are separate from each other.
Potential Applications:
This technology could be used in the development of advanced semiconductor devices for various electronic applications, such as memory storage, processors, and communication systems.
Problems Solved:
This technology addresses the need for more efficient and compact semiconductor devices with improved performance and reliability.
Benefits:
The benefits of this technology include increased functionality, higher performance, and enhanced reliability in semiconductor devices.
Commercial Applications:
Potential commercial applications of this technology include the production of faster and more reliable electronic devices for consumer electronics, telecommunications, and computing industries.
Questions about Semiconductor Devices: 1. How does the design of the semiconductor device contribute to its performance and reliability? 2. What are the potential challenges in implementing this technology in commercial semiconductor devices?
Frequently Updated Research:
Researchers are continuously exploring new ways to enhance the design and functionality of semiconductor devices using innovative materials and structures.
Original Abstract Submitted
A semiconductor device includes N number of decks. Each deck includes alternating word line layers and insulating layers. Each deck includes two first gate line slit (GLS) structures and a second GLS structure positioned between the two first GLS structures. The two first GLS structures and the second GLS structures each extend in an X-Z plane and cut through the word line layers and the insulating layers of the respective deck. At least one second GLS structure of at least one deck in the N umber of decks includes multiple sub-GLS structures. The multiple sub-GLS structures are separate from each other.
