18090056. ETCH STOP FOR OXIDE SEMICONDUCTOR DEVICES simplified abstract (Intel Corporation)
Contents
ETCH STOP FOR OXIDE SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Christopher Connor of Portland OR (US)
Vishak Venkatraman of Portland OR (US)
Vladimir Nikitin of Portland OR (US)
Yasin Kaya of Hillsboro OR (US)
ETCH STOP FOR OXIDE SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18090056 titled 'ETCH STOP FOR OXIDE SEMICONDUCTOR DEVICES
The integrated circuit structure described in the abstract includes a semiconductor material layer and a metal and oxygen or nitrogen layer above it.
- The first layer comprises an oxide semiconductor material, while the second layer serves as an etch stop layer.
- The second layer is thin, with a thickness of at most 20 nanometers.
- The structure also includes source or drain terminals that extend through the second layer and are coupled to the first layer.
- This technology is specifically applied in thin film transistors (TFTs), where the first layer acts as a thin film channel structure.
Potential Applications: - This technology can be used in the manufacturing of thin film transistors for various electronic devices. - It can also be applied in the production of integrated circuits for advanced electronic systems.
Problems Solved: - Provides a reliable and efficient method for creating integrated circuit structures with improved performance. - Offers a solution for enhancing the functionality of thin film transistors in electronic devices.
Benefits: - Improved performance and reliability of integrated circuits. - Enhanced functionality and efficiency of thin film transistors. - Potential cost savings in the manufacturing process.
Commercial Applications: Title: Advanced Thin Film Transistor Technology for Electronic Devices This technology can be utilized in the production of high-performance electronic devices such as smartphones, tablets, and displays. It has the potential to revolutionize the semiconductor industry by offering more efficient and reliable integrated circuit structures for various applications.
Questions about Thin Film Transistor Technology: 1. How does this technology improve the performance of thin film transistors? - This technology enhances the functionality and efficiency of thin film transistors by providing a reliable method for creating integrated circuit structures with improved performance.
2. What are the potential commercial applications of this advanced thin film transistor technology? - The commercial applications of this technology include the manufacturing of high-performance electronic devices such as smartphones, tablets, and displays, revolutionizing the semiconductor industry.
Original Abstract Submitted
An integrated circuit structure includes a first layer comprising a semiconductor material. In an example, the semiconductor material of the layer comprises an oxide semiconductor material (e.g., comprising a metal and oxygen). The integrated circuit structure further includes a second layer above the first layer, where the second layer includes a metal and one of oxygen or nitrogen (e.g., includes aluminum and oxygen). In an example, the second layer is an etch stop layer. In an example, the second layer has a thickness of at most 20 nanometers. The integrated circuit structure further includes a first source or drain terminal and a second source or drain terminal, where each of the first and second source or drain terminals extends through the second layer and is coupled to the first layer. In an example, the integrated circuit structure is a thin film transistor (TFT), where the first layer is a thin film channel structure of the TFT.
