18090049. THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD simplified abstract (Yangtze Memory Technologies Co., Ltd.)

THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD

Organization Name

Yangtze Memory Technologies Co., Ltd.

Inventor(s)

Yi Yang of Wuhan (CN)

Tingting Gao of Wuhan (CN)

Xiaoxin Liu of Wuhan (CN)

Wei Yuan of Wuhan (CN)

Xiaolong Du of Wuhan (CN)

Changzhi Sun of Wuhan (CN)

Zhihao Song of Wuhan (CN)

Shan Li of Wuhan (CN)

Zhiliang Xia of Wuhan (CN)

Zongliang Huo of Wuhan (CN)

THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18090049 titled 'THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD

The method described in the patent application involves fabricating a 3D memory device by creating a cavity in a semiconductor layer using a sacrificial layer and filling it with a filling structure, among other steps.

• Form sacrificial layer over substrate
• Form first dielectric stack over sacrificial layer
• Create channel hole structure
• Form opening to expose sacrificial layer
• Remove sacrificial layer to create cavity
• Fill cavity with semiconductor layer
• Fill opening with filling structure
• Form second dielectric stack over filling structure
• Opening made for gate line slit (GLS) structure

Potential Applications: - Memory devices - Semiconductor manufacturing - Electronics industry

Problems Solved: - Efficient fabrication of 3D memory devices - Creating complex structures in semiconductor layers

Benefits: - Improved memory device performance - Enhanced manufacturing processes - Increased storage capacity

Commercial Applications: Title: Advanced 3D Memory Device Fabrication Method This technology could be used in the production of high-performance memory devices for various electronic applications, potentially leading to advancements in data storage technology and semiconductor manufacturing processes.

Prior Art: Readers can explore prior research on 3D memory device fabrication methods and semiconductor manufacturing techniques to gain a deeper understanding of the innovation presented in this patent application.

Frequently Updated Research: Researchers in the field of semiconductor technology may be conducting ongoing studies on 3D memory device fabrication methods and related processes. Stay informed about the latest advancements in this area to enhance your knowledge of the subject.

Questions about 3D Memory Device Fabrication Method: 1. How does the filling structure contribute to the overall functionality of the memory device? The filling structure helps to stabilize the semiconductor layer within the cavity, ensuring proper performance and durability of the memory device.

2. What are the key differences between traditional memory device fabrication methods and the 3D approach described in this patent application? The 3D approach allows for more efficient use of space and potentially higher storage capacities compared to traditional methods, making it a promising advancement in memory device technology.

Original Abstract Submitted

A method for fabricating a 3D memory device includes forming a sacrificial layer over a substrate, forming a first dielectric stack over the sacrificial layer, forming a channel hole structure, forming an opening that exposes the sacrificial layer, removing the sacrificial layer to create a cavity and expose a part of the channel hole structure, forming a semiconductor layer to fill the cavity, filling the opening with a filling structure, and forming a second dielectric stack over the filling structure. The opening is made for a gate line slit (GLS) structure.