18090031. GATELINE MASK DESIGN FOR REMOVING SACRIFICIAL GATELINE POLYSILICON WITHIN STAIR STEP AREA simplified abstract (Yangtze Memory Technologies Co., Ltd.)
Contents
- 1 GATELINE MASK DESIGN FOR REMOVING SACRIFICIAL GATELINE POLYSILICON WITHIN STAIR STEP AREA
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GATELINE MASK DESIGN FOR REMOVING SACRIFICIAL GATELINE POLYSILICON WITHIN STAIR STEP AREA - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
- 1.11 What are the potential challenges or limitations in implementing this technology on a larger scale for commercial production?
- 1.12 Original Abstract Submitted
GATELINE MASK DESIGN FOR REMOVING SACRIFICIAL GATELINE POLYSILICON WITHIN STAIR STEP AREA
Organization Name
Yangtze Memory Technologies Co., Ltd.
Inventor(s)
GATELINE MASK DESIGN FOR REMOVING SACRIFICIAL GATELINE POLYSILICON WITHIN STAIR STEP AREA - A simplified explanation of the abstract
This abstract first appeared for US patent application 18090031 titled 'GATELINE MASK DESIGN FOR REMOVING SACRIFICIAL GATELINE POLYSILICON WITHIN STAIR STEP AREA
Simplified Explanation
The semiconductor device described in the patent application includes a stack of alternating word line layers and insulating layers, with a gate line trench extending through the stack from the core area to the stair step area. The gate line trench has different widths in the core area and stair step area, and the device also includes a first channel structure and a stair step contact formed through the stack.
- Core area, stair step area, and dummy transition area in the stack
- Gate line trench with varying widths in different areas
- First channel structure in the core area
- Stair step contact in the stair step area
Potential Applications
The technology described in the patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as memory devices, processors, and integrated circuits.
Problems Solved
This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the structure of the stack and gate line trench, enhancing connectivity and functionality within the device.
Benefits
The benefits of this technology include increased speed, reliability, and scalability of semiconductor devices, leading to enhanced overall performance and functionality in electronic systems.
Potential Commercial Applications
The innovative features of this semiconductor device could have commercial applications in the semiconductor industry, particularly in the production of high-performance memory chips, processors, and other electronic components.
Possible Prior Art
One possible prior art in this field could be the development of similar semiconductor devices with stacked structures and gate line trenches, but without the specific features and optimizations described in this patent application.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
The article provides a detailed description of the innovative features of the semiconductor device, but it does not directly compare its performance and efficiency to existing structures in the semiconductor industry.
What are the potential challenges or limitations in implementing this technology on a larger scale for commercial production?
While the article highlights the benefits and applications of the technology, it does not address the potential challenges or limitations that may arise when scaling up production for commercial use.
Original Abstract Submitted
A semiconductor device includes a stack of alternating word line layers and insulating layers. The stack includes a core area, a stair step area, and, optionally, a dummy transition area connecting the core area to the stair step area. The semiconductor device also includes a gate line (GL) trench through the stack extending from the core area through the dummy transition area to the stair step area. The GL trench has a first width within the core area and a second width within the stair step area that is different from the first width. The semiconductor device also includes a first channel structure formed through the stack within the core area, and a stair step contact (SCT) formed through at least a portion of the stack within the stair step area. The SCT connects one of the word line layers of the stack within the stair step area.
