18089927. THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Yangtze Memory Technologies Co., Ltd.)
Contents
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Yangtze Memory Technologies Co., Ltd.
Inventor(s)
ZongLiang Huo of Wuhan Hubei (CN)
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18089927 titled 'THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
The semiconductor device described in the abstract consists of multiple decks stacked in the Z direction, each containing alternating word line layers and insulating layers. The structure includes a multi-deck gate line slit (GLS) that cuts through the word line layers and insulating layers of the decks, with sidewalls in each deck and a connecting sidewall at the border between adjacent decks.
- The semiconductor device features a unique multi-deck gate line slit (GLS) structure that extends in the X-Z plane and connects adjacent decks.
- The GLS structure includes first, second, and third sidewalls, providing enhanced functionality and performance.
- The design allows for efficient integration of multiple decks in a compact space, optimizing the overall performance of the semiconductor device.
- By cutting through the word line layers and insulating layers of the decks, the GLS structure facilitates improved communication and data transfer within the device.
- The innovative structure enhances the overall efficiency and functionality of the semiconductor device, making it a valuable advancement in the field of semiconductor technology.
Potential Applications: - Memory devices - Microprocessors - Integrated circuits
Problems Solved: - Enhanced communication and data transfer within semiconductor devices - Optimization of space and performance in stacked deck configurations
Benefits: - Improved efficiency and functionality of semiconductor devices - Enhanced performance in memory and processing applications - Compact design for space-saving solutions
Commercial Applications: Title: Advanced Semiconductor Devices with Multi-Deck Gate Line Slit Structure This technology can be applied in various commercial sectors such as: - Electronics manufacturing - Semiconductor industry - Research and development in technology companies
Questions about the technology: 1. How does the multi-deck gate line slit structure improve the performance of semiconductor devices? 2. What are the potential challenges in implementing this innovative design in commercial semiconductor products?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and multi-deck gate line slit structures to ensure optimal performance and efficiency in your devices.
Original Abstract Submitted
A semiconductor device includes Number of decks that are stacked up in a Z direction and extend in parallel with an X-Y plane. N is an integer greater than 1. Each deck includes alternating word line layers and insulating layers. The N number of decks includes a first deck and a second deck adjacent to the first deck. A multi-deck gate line slit (GLS) structure extends in an X-Z plane and cuts through the word line layers and the insulating layers of the N number of decks. The multi-deck GLS structure has a first sidewall in the first deck, a second sidewall in the second deck, and a third sidewall at a border between the first deck and the second deck. The third sidewall connects the first sidewall and the second sidewall.
