18089495. THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF simplified abstract (Yangtze Memory Technologies Co., Ltd.)

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

Organization Name

Yangtze Memory Technologies Co., Ltd.

Inventor(s)

Kun Zhang of Wuhan (CN)

Yuancheng Yang of Wuhan (CN)

Wenxi Zhou of Wuhan (CN)

Zhiliang Xia of Wuhan (CN)

Dongxue Zhao of Wuhan (CN)

Tao Yang of Wuhan (CN)

Lei Liu of Wuhan (CN)

Di Wang of Wuhan (CN)

Zongliang Huo of Wuhan (CN)

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18089495 titled 'THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

The abstract describes a patent application for three-dimensional (3D) memory devices and their fabrication methods. The 3D memory device includes multiple semiconductor structures stacked vertically, each serving a specific function within the device.

• The 3D memory device comprises a first semiconductor structure with an array of first type memory cells, a second semiconductor structure with an array of second type memory cells different from the first type, a third semiconductor structure housing a first peripheral circuit, and a fourth semiconductor structure containing a second peripheral circuit.
• The first and second semiconductor structures are sandwiched between the third and fourth semiconductor structures in a vertical arrangement, optimizing space and functionality.
• This design allows for increased memory capacity and efficiency in a compact form factor, making it suitable for various applications requiring high-performance memory solutions.
• The fabrication methods involved in creating these 3D memory devices are crucial to ensuring precise alignment and integration of the different semiconductor structures.
• By utilizing vertical stacking, the 3D memory devices offer improved data storage capabilities and faster access speeds compared to traditional memory devices.

Potential Applications: - Data centers - High-performance computing - Artificial intelligence and machine learning systems - Consumer electronics such as smartphones and tablets

Problems Solved: - Limited memory capacity in traditional memory devices - Inefficient use of space in memory systems - Slow data access speeds in certain applications

Benefits: - Increased memory capacity - Enhanced data access speeds - Compact form factor - Improved efficiency in memory systems

Commercial Applications: Title: "Advanced 3D Memory Devices for High-Performance Applications" This technology can be utilized in various commercial sectors such as data centers, consumer electronics, and high-performance computing, offering enhanced memory solutions for demanding applications.

Questions about 3D Memory Devices: 1. How do 3D memory devices differ from traditional memory devices in terms of performance and capacity? 3D memory devices offer increased memory capacity and faster data access speeds due to their vertical stacking design, allowing for more efficient use of space and improved functionality.

2. What are the potential challenges in fabricating 3D memory devices, and how are they addressed in this patent application? Fabricating 3D memory devices involves precise alignment and integration of multiple semiconductor structures, which can be challenging. This patent application likely addresses these challenges by detailing specific methods to ensure accurate assembly and functionality.

Original Abstract Submitted

Three-dimensional (3D) memory devices and fabricating methods are disclose. A disclosed 3D memory device can comprises, a first semiconductor structure comprising an array of first type memory cells, a second semiconductor structure comprising an array of second type memory cells different from the first type memory cells, a third semiconductor structure comprising a first peripheral circuit, and a fourth semiconductor structure comprising a second peripheral circuit. The first semiconductor structure and the second semiconductor structure are sandwiched between the third semiconductor structure and the fourth semiconductor structure in a vertical direction.