18089488. THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF simplified abstract (Yangtze Memory Technologies Co., Ltd.)

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

Organization Name

Yangtze Memory Technologies Co., Ltd.

Inventor(s)

Kun Zhang of Wuhan (CN)

Yuancheng Yang of Wuhan (CN)

Wenxi Zhou of Wuhan (CN)

Zhiliang Xia of Wuhan (CN)

Dongxue Zhao of Wuhan (CN)

Tao Yang of Wuhan (CN)

Lei Liu of Wuhan (CN)

Di Wang of Wuhan (CN)

Zongliang Huo of Wuhan (CN)

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18089488 titled 'THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

The abstract describes a patent application for three-dimensional (3D) memory devices and their fabrication methods. The memory device includes different types of memory cells and peripheral circuits arranged in multiple semiconductor structures.

• The memory device consists of a first semiconductor structure with an array of first type memory cells, a second semiconductor structure with an array of second type memory cells, a third semiconductor structure containing a first peripheral circuit, and a fourth semiconductor structure containing a second peripheral circuit.
• The third semiconductor structure is positioned between the first and fourth semiconductor structures, while the fourth semiconductor structure is located between the second and third semiconductor structures.

Potential Applications: - Data storage in electronic devices - Memory modules for computers and servers - High-speed data processing applications

Problems Solved: - Increased memory capacity in a compact form factor - Enhanced data processing speed and efficiency - Improved overall performance of electronic devices

Benefits: - Higher memory density - Faster data access and retrieval - Reduced power consumption

Commercial Applications: Title: "Innovative 3D Memory Devices for Enhanced Data Storage" This technology can be utilized in various commercial applications such as: - Consumer electronics - Cloud computing servers - Artificial intelligence systems

Frequently Updated Research: Researchers are continually exploring new materials and fabrication techniques to enhance the performance and scalability of 3D memory devices.

Questions about 3D Memory Devices: 1. How do 3D memory devices differ from traditional memory storage solutions? - 3D memory devices offer higher memory density and faster data access compared to traditional memory solutions due to their vertical stacking design. 2. What are the key challenges in fabricating 3D memory devices? - Fabricating 3D memory devices involves precise alignment of multiple semiconductor structures and optimizing the performance of different types of memory cells.

Original Abstract Submitted

Three-dimensional (D) memory devices and fabricating methods are disclose. A disclosed D memory device can comprises, a first semiconductor structure comprising an array of first type memory cells, a second semiconductor structure comprising an array of second type memory cells different from the first type memory cells, a third semiconductor structure comprising a first peripheral circuit, and a fourth semiconductor structure comprising a second peripheral circuit. The third semiconductor structure is sandwiched between the first semiconductor structure and the fourth semiconductor structure, and the fourth semiconductor is sandwiched between the second semiconductor structure and the third semiconductor structure.