18088890. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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INTEGRATED CIRCUIT DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

GYEOM Kim of SUWON-SI (KR)

DAHYE Kim of SUWON-SI (KR)

JINBUM Kim of SUWON-SI (KR)

KYUNGBIN Chun of SUWON-SI (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18088890 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The patent application describes an integrated circuit (IC) device that includes a fin-type active region, a gate line surrounding a channel region, and a source/drain region on the fin-type active region. The source/drain region includes a buffer layer and a local buffer pattern.

  • The IC device has a fin-type active region, which is a structure that allows for better control of electrical current flow.
  • The gate line surrounds the channel region, which is where the electrical current flows through.
  • The source/drain region includes a buffer layer, which helps to improve the performance and reliability of the IC device.
  • The buffer layer has an edge buffer portion with a smaller thickness near an outer insulating spacer, which helps to reduce electrical leakage.
  • The local buffer pattern includes a wedge portion that fills the space between the edge buffer portion and the outer insulating spacer, providing additional support and stability.
  • The main body layer is in contact with both the buffer layer and the local buffer pattern, ensuring proper electrical connections.

Potential Applications

  • This technology can be used in various electronic devices that use integrated circuits, such as smartphones, computers, and tablets.
  • It can also be applied in automotive electronics, medical devices, and industrial equipment.

Problems Solved

  • The integrated circuit device addresses the issue of electrical leakage, which can affect the performance and reliability of the device.
  • It provides improved control of electrical current flow, resulting in better overall performance.

Benefits

  • The use of a fin-type active region allows for better control of electrical current flow, leading to improved performance and efficiency.
  • The buffer layer and local buffer pattern help to reduce electrical leakage, enhancing the reliability of the IC device.
  • The design of the IC device provides stability and support, ensuring proper electrical connections and preventing damage.


Original Abstract Submitted

An integrated circuit (IC) device includes a fin-type active region, a channel region on the fin-type active region, a gate line surrounding the channel region, an outer insulating spacer covering a sidewall of the gate line, a source/drain region on the fin-type active region, wherein the source/drain region includes a buffer layer including a portion in contact with the channel region and a portion in contact with the fin-type active region, the buffer layer including an edge buffer portion having a smaller thickness than other portions thereof at a position adjacent to the outer insulating spacer, a local buffer pattern including a wedge portion, the wedge portion filling a space defined by the edge buffer portion and the outer insulating spacer, and a main body layer in contact with each of the buffer layer and the local buffer pattern.

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