18088543. INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE POWER DELIVERY AND SIGNAL ROUTING FOR FRONT SIDE DRAM simplified abstract (Intel Corporation)
INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE POWER DELIVERY AND SIGNAL ROUTING FOR FRONT SIDE DRAM
Organization Name
Inventor(s)
Abhishek Anil Sharma of Portland OR (US)
Tahir Ghani of Portland OR (US)
Sagar Suthram of Portland OR (US)
Anand S. Murthy of Portland OR (US)
Pushkar Ranade of San Jose CA (US)
Wilfred Gomes of Portland OR (US)
INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE POWER DELIVERY AND SIGNAL ROUTING FOR FRONT SIDE DRAM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18088543 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE POWER DELIVERY AND SIGNAL ROUTING FOR FRONT SIDE DRAM
Simplified Explanation: The patent application describes structures in integrated circuits that enable power delivery and signal routing on the backside for front side dynamic random access memory (DRAM).
- Structures in integrated circuits enable power delivery and signal routing on the backside for front side DRAM.
- Integrated circuit includes a DRAM layer with capacitors over transistors and metallization layers above.
- Backside structure below the DRAM layer includes metal lines for power delivery and signal routing to the transistors.
Key Features and Innovation:
- Integration of backside power delivery and signal routing for front side DRAM.
- Efficient power delivery and signal routing to DRAM transistors.
- Enhanced performance and reliability of DRAM systems.
Potential Applications:
- Semiconductor industry for memory devices.
- Consumer electronics for improved performance.
- Data centers for enhanced memory capabilities.
Problems Solved:
- Efficient power delivery and signal routing in DRAM systems.
- Improved performance and reliability of memory devices.
Benefits:
- Enhanced performance of DRAM systems.
- Improved reliability and efficiency of memory devices.
- Potential cost savings in semiconductor manufacturing.
Commercial Applications: Potential commercial applications include:
- Memory modules for consumer electronics.
- Servers and data centers for high-performance computing.
- Semiconductor manufacturing for advanced memory devices.
Prior Art: Prior art related to backside power delivery and signal routing in integrated circuits can be found in research papers and patents related to semiconductor packaging and memory technologies.
Frequently Updated Research: Research on advanced packaging technologies and memory systems may provide insights into further improvements in backside power delivery and signal routing for DRAM.
Questions about backside power delivery and signal routing in integrated circuits: 1. How does the integration of backside power delivery improve the performance of DRAM systems? 2. What are the potential challenges in implementing backside signal routing for front side DRAM?
Original Abstract Submitted
Structures having backside power delivery and signal routing for front side DRAM are described. In an example, an integrated circuit structure includes a front side structure including a dynamic random access memory (DRAM) layer having one or more capacitors over one or more transistors, and a plurality of metallization layers above the DRAM layer. A backside structure is below and coupled to the transistors of the DRAM layer, the backside structure including metal lines for power delivery and signal routing to the one or more transistors of the DRAM layer.
