18088542. GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract (Intel Corporation)
Contents
GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY
Organization Name
Inventor(s)
Han Wui Then of Portland OR (US)
Sansaptak Dasgupta of Milpitas CA (US)
Pratik Koirala of Portland OR (US)
Wesley Harrison of Portland OR (US)
Marko Radosavljevic of Portland OR (US)
GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18088542 titled 'GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY
Simplified Explanation: The patent application describes a technology involving a gallium nitride (GaN) layer on a substrate for integrated circuit applications. The structure includes layers of silicon, carbon, gallium, and nitrogen.
Key Features and Innovation:
- Integration of gallium nitride (GaN) layer on a substrate for integrated circuit technology.
- Layer comprising silicon and carbon above the substrate.
- Layer comprising gallium and nitrogen on the silicon and carbon layer.
Potential Applications: This technology can be used in the development of advanced integrated circuits, high-power electronics, and optoelectronic devices.
Problems Solved:
- Enhanced performance and efficiency of integrated circuits.
- Improved thermal management in electronic devices.
- Increased reliability and durability of electronic components.
Benefits:
- Higher performance capabilities.
- Improved thermal conductivity.
- Enhanced reliability and longevity of electronic devices.
Commercial Applications: The technology can be applied in the manufacturing of high-performance electronic devices, power amplifiers, and LED lighting systems, leading to advancements in the semiconductor industry.
Questions about Gallium Nitride Layer on Substrate Carburization: 1. How does the integration of gallium nitride (GaN) layer on a substrate benefit the performance of integrated circuits? 2. What are the potential commercial applications of this technology in the semiconductor industry?
Frequently Updated Research: Ongoing research focuses on optimizing the carburization process for gallium nitride (GaN) layers on substrates to further enhance the efficiency and performance of integrated circuits.
Original Abstract Submitted
Gallium nitride (GaN) layer on substrate carburization for integrated circuit technology is described. In an example, an integrated circuit structure includes a substrate including silicon. A layer comprising silicon and carbon is above the substrate. A layer comprising gallium and nitrogen is on the layer comprising silicon and carbon.
