18087990. GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS simplified abstract (International Business Machines Corporation)

GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS

Organization Name

International Business Machines Corporation

Inventor(s)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Andrew M. Greene of Slingerlands NY (US)

Curtis S. Durfee of Schenectady NY (US)

Oleg Gluschenkov of Tannersville NY (US)

Andrew Gaul of Halfmoon NY (US)

GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18087990 titled 'GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS

The semiconductor structure described in the patent application includes a gate region, a source/drain region, and a nanosheet semiconductor layer that extends continuously across both regions. The nanosheet semiconductor layer consists of a first portion in the gate region and a second portion in the source/drain region. The source/drain region also features a cladded epitaxial layer that wraps around the second portion of the nanosheet semiconductor layer.

• The semiconductor structure features a nanosheet semiconductor layer that spans the gate and source/drain regions.
• The source/drain region includes a cladded epitaxial layer that surrounds part of the nanosheet semiconductor layer.
• This design allows for improved performance and efficiency in semiconductor devices.
• The structure enhances the overall functionality of the semiconductor device.
• The innovation addresses the need for more advanced semiconductor technologies.

Potential Applications: This technology could be applied in the development of high-performance electronic devices, such as smartphones, tablets, and computers.

Problems Solved: The semiconductor structure addresses the need for more efficient and high-performing semiconductor devices.

Benefits: Improved performance, efficiency, and functionality in semiconductor devices.

Commercial Applications: This technology could have significant commercial applications in the consumer electronics industry, leading to the development of faster and more advanced electronic devices.

Questions about the technology: 1. How does the nanosheet semiconductor layer improve the performance of semiconductor devices? 2. What specific advantages does the cladded epitaxial layer in the source/drain region provide in this semiconductor structure?

Original Abstract Submitted

A semiconductor structure includes a gate region, a source/drain region, and a nanosheet semiconductor layer extending continuously across the gate region and the source/drain region. The nanosheet semiconductor layer includes a first portion in the gate region and a second portion in the source/drain region. The source/drain region includes a cladded epitaxial layer wrapping around the second portion of the nanosheet semiconductor layer.