18085426. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
- 1.11 What are the specific electronic applications where this semiconductor device could be most beneficial?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hiroki Hatada of Kanazawa Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18085426 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple electrodes and semiconductor regions, as well as a gate electrode with two electrode portions. The gate electrode faces a semiconductor region via a gate insulating layer, and an interconnect part of the third electrode is located on one of the electrode portions.
- First to third electrodes
- First to third semiconductor regions
- Gate electrode with two electrode portions
- Gate insulating layer
- Interconnect part of the third electrode
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, power electronics, and sensors.
Problems Solved
This technology addresses the need for improved semiconductor devices with enhanced performance, efficiency, and reliability. By optimizing the design and configuration of the electrodes and semiconductor regions, the device can operate more effectively in different electronic systems.
Benefits
Some benefits of this technology include:
- Enhanced performance of semiconductor devices
- Improved efficiency in electronic applications
- Increased reliability and durability of the devices
Potential Commercial Applications
The semiconductor device innovation could have potential commercial applications in industries such as:
- Electronics manufacturing
- Semiconductor technology
- Consumer electronics production
Possible Prior Art
One possible prior art for this technology could be the development of similar semiconductor devices with multiple electrodes and semiconductor regions, but with different configurations or materials. Research papers or patents related to advanced semiconductor devices may also exist in this field.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to evaluate the advantages of this innovation over current solutions.
What are the specific electronic applications where this semiconductor device could be most beneficial?
The article does not specify the specific electronic applications where this semiconductor device could be most beneficial. Additional studies or experiments could help identify the ideal use cases for this technology in different industries.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes first to third electrodes, first to third semiconductor regions and a gate electrode. The first semiconductor region is located on the first electrode and electrically connected with the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The gate electrode faces the second semiconductor region via a gate insulating layer. An upper part of the gate electrode includes first and second electrode portions. The first electrode portion faces the third semiconductor region via the gate insulating layer. The second electrode portion is arranged with the first electrode portion. The second electrode is located on the second and third semiconductor regions. The third electrode includes an interconnect part located on the second electrode portion and is separated from the second electrode.
