18083818. FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract (International Business Machines Corporation)

FLEXIBLE MOL AND/OR BEOL STRUCTURE

Organization Name

International Business Machines Corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Albert M. Chu of Nashua NH (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

REINALDO Vega of Mahopac NY (US)

Ruilong Xie of Niskayuna NY (US)

FLEXIBLE MOL AND/OR BEOL STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18083818 titled 'FLEXIBLE MOL AND/OR BEOL STRUCTURE

The semiconductor structure described in the abstract includes a MOL and/or BEOL structure for low resistance, low capacitance, and design flexibility. It consists of a first metal level with metal lines and vias in a first interlayer dielectric material layer, and a second metal level above it with metal lines and vias in a second interlayer dielectric material layer. The first metal level is formed using a damascene process, while the second metal level is formed using a subtractive etch.

• The structure utilizes a single metallization for both the first and second metal levels.
• The first metal level is at a lower level than the second metal level, providing efficient routing of signals.
• The use of a damascene process for the first metal level ensures precise metal line formation.
• The second metal level, formed using a subtractive etch, allows for flexibility in design and layout.
• The structure offers low resistance and low capacitance, enhancing overall performance.

Potential Applications: - Integrated circuits - Microprocessors - Memory devices

Problems Solved: - High resistance and capacitance in semiconductor structures - Limited design flexibility in metal levels

Benefits: - Improved performance with low resistance and capacitance - Enhanced design flexibility - Efficient signal routing

Commercial Applications: Title: Advanced Semiconductor Structures for Enhanced Performance This technology can be applied in the semiconductor industry for the development of high-performance integrated circuits, microprocessors, and memory devices. The low resistance and capacitance offered by this structure can significantly improve the efficiency and speed of electronic devices, making them ideal for applications requiring high performance and reliability.

Questions about Semiconductor Structures: 1. How does the use of a damascene process benefit the formation of metal lines in the first metal level? The damascene process allows for precise and controlled deposition of metal, resulting in well-defined metal lines with minimal defects.

2. What advantages does the second metal level provide in terms of design flexibility? The second metal level, formed using a subtractive etch, allows for modifications and adjustments to the metal lines and vias, offering greater flexibility in designing complex semiconductor structures.

Original Abstract Submitted

A semiconductor structure is provided that includes a MOL and/or BEOL structure for low resistance, low capacitance and design flexibility. The structure includes a first metal level including a plurality of first metal lines and a plurality of first metal vias located at same level within a first interlayer dielectric material layer, and a second metal level located above the first metal level. The second metal level includes a plurality of second metal lines and a plurality of second metal vias located at a same level within a second interlayer dielectric material layer. The first metal level is formed utilizing a damascene process and the second metal level is formed utilizing a substrative etch. A single metallization is used to provide the first and second metal levels.