18082080. THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED YIELD AND RELIABILITY simplified abstract (Yangtze Memory Technologies Co., Ltd.)
Contents
- 1 THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED YIELD AND RELIABILITY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED YIELD AND RELIABILITY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED YIELD AND RELIABILITY
Organization Name
Yangtze Memory Technologies Co., Ltd.
Inventor(s)
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED YIELD AND RELIABILITY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18082080 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED YIELD AND RELIABILITY
Simplified Explanation
The abstract describes a 3D memory device with specific structures within the conductor/insulator stack to improve memory cell performance.
- Conductor/insulator stack with alternating conductive and dielectric layers
- Channel hole structures in a first region of memory cells
- Blocking structure adjacent to the first region
- Dummy channel hole structure in the first region filled with dielectric material
- First dielectric filling structure formed by the dummy channel hole structure
Potential Applications
The technology described in the patent application could have potential applications in:
- Memory devices
- Data storage systems
- Semiconductor industry
Problems Solved
This technology addresses the following problems:
- Improving memory cell performance
- Enhancing data storage capabilities
- Increasing efficiency in semiconductor devices
Benefits
The benefits of this technology include:
- Enhanced memory device functionality
- Improved data retention and retrieval
- Increased overall performance of semiconductor devices
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Cloud computing infrastructure
- Industrial automation systems
Possible Prior Art
One possible prior art for this technology could be the development of 3D memory devices with similar conductor/insulator stack configurations and channel hole structures.
Unanswered Questions
How does this technology compare to existing memory device structures in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing memory device structures. Further research and testing would be needed to determine the specific advantages and disadvantages of this innovation.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
The article does not address the potential challenges in scaling up the production of memory devices using this technology. Factors such as cost, compatibility with existing manufacturing processes, and reliability could be significant considerations in commercial implementation.
Original Abstract Submitted
A 3D memory device includes a conductor/insulator stack containing a conductive layer and a dielectric layer alternatingly stacked, channel hole structures in a first region of memory cells in the conductor/insulator stack, a blocking structure adjacent to the first region, and a dummy channel hole structure in the first region. The dummy channel hole structure is adjacent to the blocking structure, and includes a dielectric material that fills a channel hole to form a first dielectric filling structure.
