18081795. STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract (International Business Machines Corporation)

STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs)

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Albert M. Chu of Nashua NH (US)

Brent A. Anderson of Jericho VT (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) - A simplified explanation of the abstract

This abstract first appeared for US patent application 18081795 titled 'STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs)

Simplified Explanation: The semiconductor device described in the patent application includes a top layer with a top vertical-transport field effect transistor (VTFET), a bottom layer with a first bottom VTFET, and frontside and backside contacts that connect the bottom source/drain epitaxial of the first bottom VTFET to the back end of line interconnect.

• The semiconductor device features a top vertical-transport field effect transistor (VTFET) in the top layer.
• A first bottom VTFET is located in the bottom layer of the device.
• Frontside and backside contacts, along with a local interconnect, connect the bottom source/drain epitaxial of the first bottom VTFET to the back end of line interconnect.

Potential Applications: 1. High-performance computing systems 2. Power electronics 3. Telecommunications infrastructure

Problems Solved: 1. Improved vertical-transport field effect transistor performance 2. Enhanced connectivity between different layers of the semiconductor device

Benefits: 1. Increased efficiency in vertical-transport field effect transistor operation 2. Enhanced overall performance of the semiconductor device 3. Improved reliability and connectivity

Commercial Applications: The technology described in the patent application could be utilized in the development of advanced computing systems, power electronics, and telecommunications infrastructure, leading to more efficient and reliable devices in these industries.

Questions about Semiconductor Device Technology: 1. How does the top vertical-transport field effect transistor (VTFET) contribute to the overall performance of the semiconductor device? 2. What are the potential implications of the improved connectivity between layers in the semiconductor device for future technological advancements?

Original Abstract Submitted

Embodiments are disclosed for a semiconductor device including a top layer having a top vertical-transport field effect transistor (VTFET). Further, the semiconductor device includes a bottom layer disposed beneath the top layer, wherein the bottom layer includes a first bottom VTFET. Additionally, the semiconductor device includes a first frontside contact that wires, through a first backside contact and a first local interconnect, a bottom source/drain epitaxial of the first bottom VTFET to the back end of line interconnect.