18080892. DIFFUSION BREAK STRUCTURE FOR TRANSISTORS simplified abstract (International Business Machines Corporation)
Contents
DIFFUSION BREAK STRUCTURE FOR TRANSISTORS
Organization Name
International Business Machines Corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Tao Li of Slingerlands NY (US)
Julien Frougier of Albany NY (US)
Susan Ng Emans of Albany NY (US)
Carl Radens of LaGrangeville NY (US)
Dureseti Chidambarrao of Weston CT (US)
DIFFUSION BREAK STRUCTURE FOR TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18080892 titled 'DIFFUSION BREAK STRUCTURE FOR TRANSISTORS
The semiconductor device described in the abstract features a first gate region, a second gate region, and a diffusion break region between them. The top surface of the diffusion break region aligns with the top surface of one or more gate contacts and/or one or more source/drain contacts.
- The semiconductor device includes a first gate region and a second gate region.
- A diffusion break region is situated between the first gate region and the second gate region.
- The top surface of the diffusion break region is co-planar with the top surface of gate contacts and source/drain contacts.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can enhance the performance and efficiency of integrated circuits.
Problems Solved: - Provides improved alignment and contact between different regions of the semiconductor device. - Helps in optimizing the functionality of the device.
Benefits: - Enhanced precision in semiconductor device fabrication. - Improved electrical connectivity within the device.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, such as smartphones, computers, and other consumer electronics. It can also find applications in the automotive industry for advanced driver assistance systems and in the healthcare sector for medical imaging equipment.
Questions about Semiconductor Device Technology: 1. How does the alignment of the diffusion break region with gate and source/drain contacts impact the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further improve the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in the field to leverage the full potential of this technology.
Original Abstract Submitted
A semiconductor device includes a first gate region and a second gate region. A diffusion break region is between the first gate region and the second gate region. A top surface of the diffusion break region is co-planar with at least one of a top surface of one or more gate contacts and a top surface of one or more source/drain contacts.
