18080612. LOW Z-HEIGHT, GLASS-REINFORCED PACKAGE WITH EMBEDDED BRIDGE simplified abstract (Intel Corporation)
Contents
LOW Z-HEIGHT, GLASS-REINFORCED PACKAGE WITH EMBEDDED BRIDGE
Organization Name
Inventor(s)
Rahul Manepalli of Chandler AZ (US)
Srinivas Pietambaram of Chandler AZ (US)
Brandon Marin of Gilbert AZ (US)
Suddhasattwa Nad of Chandler AZ (US)
Jeremy Ecton of Gilbert AZ (US)
LOW Z-HEIGHT, GLASS-REINFORCED PACKAGE WITH EMBEDDED BRIDGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18080612 titled 'LOW Z-HEIGHT, GLASS-REINFORCED PACKAGE WITH EMBEDDED BRIDGE
The patent application describes an integrated circuit (IC) package that includes multiple IC dies with different metallization features, separated by a glass layer. Through vias extend through the glass layer to connect the metallization features of the different dies. A dielectric material surrounds one of the IC dies, with package metallization within it, connected to the IC dies and terminating at package interconnect interfaces.
- Glass layer separates multiple IC dies with different metallization features
- Through vias connect metallization features of different dies
- Dielectric material surrounds one IC die with package metallization within
- Package metallization connects to IC dies and terminates at package interconnect interfaces
Potential Applications: - Semiconductor industry for advanced integrated circuits - Electronics manufacturing for high-performance devices
Problems Solved: - Improved connectivity between different IC dies - Enhanced performance and reliability of integrated circuits
Benefits: - Higher integration density - Improved signal transmission - Enhanced overall functionality of IC packages
Commercial Applications: Title: Advanced Integrated Circuit Packaging for High-Performance Electronics This technology can be utilized in: - Consumer electronics - Telecommunications equipment - Automotive electronics
Prior Art: Research into advanced IC packaging technologies and semiconductor manufacturing processes can provide insights into similar innovations.
Frequently Updated Research: Ongoing developments in semiconductor materials and packaging techniques may impact the evolution of this technology.
Questions about IC Package Integration: 1. How does the glass layer contribute to the performance of the integrated circuit package? The glass layer provides insulation and structural support while allowing for the passage of through vias to connect the different IC dies.
2. What are the advantages of using package metallization within the dielectric material? Package metallization within the dielectric material ensures efficient connectivity and signal transmission within the integrated circuit package.
Original Abstract Submitted
An integrated circuit (IC) package comprises a first IC die having first metallization features, a second IC die having second metallization features, and a third IC die having third metallization features. A glass layer is between the third IC die and both of the first IC die and the second IC die. A plurality of first through vias extend through the glass layer, coupling the third metallization features with first ones of the first metallization features and with first ones of the second metallization features. A plurality of second through vias extend through the glass layer. A dielectric material is around the third die and a package metallization is within the dielectric material. The package metallization is coupled to at least one of the first, second, or third IC die, and terminating at a plurality of package interconnect interfaces.
