18080431. TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY simplified abstract (Google LLC)
Contents
- 1 TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Advanced Photoresist Patterning Technology
- 1.13 Original Abstract Submitted
TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY
Organization Name
Inventor(s)
Joseph Daniel Lowney of Tucson AZ (US)
Thomas Mercier of Weston FL (US)
TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18080431 titled 'TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY
Simplified Explanation
The patent application describes a method for creating a two-dimensional pattern on a photoresist layer using two separate exposures with alternating illumination intensities along different dimensions.
- The first exposure creates a series of features with alternating minima and maxima of illumination intensity along one dimension.
- The second exposure creates a series of features with alternating minima and maxima of illumination intensity along a different dimension that is angularly separated from the first dimension by a rotation factor.
Key Features and Innovation
- Two-dimensional pattern generation on a photoresist layer.
- Utilizes two separate exposures with alternating illumination intensities along different dimensions.
- Angular separation between the dimensions enhances the pattern complexity.
Potential Applications
The technology can be applied in semiconductor manufacturing, microelectronics, and nanotechnology for creating intricate patterns on photoresist layers.
Problems Solved
- Enables the creation of complex two-dimensional patterns.
- Enhances precision and control in pattern generation processes.
Benefits
- Improved accuracy in pattern creation.
- Increased flexibility in design options.
- Enhanced efficiency in manufacturing processes.
Commercial Applications
- "Advanced Photoresist Patterning Technology for Semiconductor Manufacturing and Nanotechnology Applications"
Prior Art
Further research can be conducted in the field of photoresist patterning methods and advanced lithography techniques.
Frequently Updated Research
Stay updated on advancements in photoresist patterning technologies and lithography methods to enhance manufacturing processes.
Questions about Advanced Photoresist Patterning Technology
What are the potential applications of this technology in the semiconductor industry?
The technology can be used for creating intricate patterns on photoresist layers in semiconductor manufacturing processes, enhancing the production of advanced microelectronics components.
How does the angular separation between dimensions improve the pattern generation process?
The angular separation between dimensions allows for more complex and detailed patterns to be created on the photoresist layer, increasing the design flexibility and precision in manufacturing processes.
Original Abstract Submitted
Systems and methods are provided for generating a two-dimensional pattern on a photoresist layer. A photoresist layer is exposed via a first exposure to a first unidimensional series of features alternatingly providing first minima and maxima of illumination intensity along a first dimension. The photoresist layer is then exposed via a second exposure to a second unidimensional series of features alternatingly providing second minima and maxima of illumination intensity along a second dimension that is angularly separated from the second dimension by an exposure rotation factor.
