18079817. Selective Implantation into STI of ETSOI Device simplified abstract (Applied Materials, Inc.)
Contents
- 1 Selective Implantation into STI of ETSOI Device
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Selective Implantation into STI of ETSOI Device - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about STI Formation
- 1.13 Original Abstract Submitted
Selective Implantation into STI of ETSOI Device
Organization Name
Inventor(s)
Qintao Zhang of Mt Kisco NY (US)
Selective Implantation into STI of ETSOI Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18079817 titled 'Selective Implantation into STI of ETSOI Device
Simplified Explanation
The patent application describes a method for improving the performance of extremely thin silicon on insulator (ETSOI) devices by forming a shallow trench isolation (STI) structure.
- The method involves creating isolation regions that extend through a buried oxide (BOX) layer and the substrate.
- A well mask is used to expose specific isolation regions for stress modification through implantation.
Key Features and Innovation
- Formation of shallow trench isolation (STI) to enhance ETSOI device performance.
- Patterning of a hardmask over the substrate.
- Creation of isolation regions extending through the BOX layer and substrate.
- Stress modification of specific isolation regions through implantation.
Potential Applications
This technology can be applied in the semiconductor industry for improving the performance of ETSOI devices used in various electronic applications.
Problems Solved
This technology addresses the challenge of enhancing the performance of extremely thin silicon on insulator (ETSOI) devices by forming a shallow trench isolation (STI) structure.
Benefits
- Improved performance of ETSOI devices.
- Enhanced stress modification capabilities.
- Increased efficiency in semiconductor manufacturing processes.
Commercial Applications
Title: Enhanced Performance of ETSOI Devices through STI Formation This technology can be utilized in the production of advanced electronic devices, such as smartphones, tablets, and other consumer electronics, to improve their overall performance and reliability.
Prior Art
Readers can explore prior research on STI formation techniques in semiconductor manufacturing to understand the evolution of this technology.
Frequently Updated Research
Researchers are continually exploring new methods and materials to further enhance the performance of ETSOI devices through STI formation.
Questions about STI Formation
What are the key benefits of using STI in ETSOI devices?
STI in ETSOI devices helps improve device performance, stress modification capabilities, and overall efficiency in semiconductor manufacturing processes.
How does STI formation impact the reliability of electronic devices?
STI formation enhances the reliability of electronic devices by providing better isolation between components and reducing stress on the materials.
Original Abstract Submitted
Disclosed herein are approaches for forming a shallow trench isolation (STI) to improve extremely thin silicon on insulator (ETSOI) device performance. In one approach, a method may include providing a device stack comprising a buried oxide (BOX) layer in a substrate, patterning a hardmask over the substrate, and forming a plurality of isolation regions in the device stack, wherein the plurality of isolation regions extend through the box layer and the substrate. The method may further include forming a well mask over the device stack, wherein an opening through the well mask exposes a first isolation region of the plurality of isolation regions, and modifying a stress of a material of the first isolation region by implanting the first isolation region of the plurality of isolation regions.
