18079440. Interconnects with Sidewall Barrier Layer Divot Fill simplified abstract (International Business Machines Corporation)

Interconnects with Sidewall Barrier Layer Divot Fill

Organization Name

International Business Machines Corporation

Inventor(s)

Koichi Motoyama of Clifton Park NY (US)

Oscar Van Der Straten of Guilderland Center NY (US)

Chih-Chao Yang of Glenmont NY (US)

Interconnects with Sidewall Barrier Layer Divot Fill - A simplified explanation of the abstract

This abstract first appeared for US patent application 18079440 titled 'Interconnects with Sidewall Barrier Layer Divot Fill

Simplified Explanation

The patent application describes a structure for interconnects in electronic devices, with a focus on fully-aligned vias and divot fill.

Key Features and Innovation

• Interconnect structure with metal lines embedded in dielectric layers.
• Conductive vias aligned with metal lines.
• Barrier and protective layers separating metal lines from dielectric layers.
• Metal cap option for additional protection.

Potential Applications

This technology can be applied in the manufacturing of advanced electronic devices such as microprocessors, memory chips, and other integrated circuits.

Problems Solved

This innovation addresses the challenge of creating reliable and efficient interconnects in densely packed electronic devices, ensuring proper alignment and insulation between components.

Benefits

• Improved performance and reliability of electronic devices.
• Enhanced manufacturing process for complex integrated circuits.
• Increased efficiency in signal transmission between components.

Commercial Applications

The technology can be utilized in the semiconductor industry for the production of high-performance electronic devices, catering to a wide range of applications in consumer electronics, telecommunications, and computing.

Prior Art

Prior research in the field of semiconductor manufacturing and interconnect technologies can be explored to understand the evolution of similar concepts and advancements in the industry.

Frequently Updated Research

Stay updated on the latest developments in semiconductor manufacturing, interconnect technologies, and materials science to leverage cutting-edge innovations in electronic device production.

Questions about Interconnect Structures

What are the key components of the interconnect structure described in the patent application?

The key components include metal lines embedded in dielectric layers, conductive vias aligned with the metal lines, barrier and protective layers for insulation, and the option for a metal cap for additional protection.

How does this technology improve the performance and reliability of electronic devices?

This technology enhances the efficiency of signal transmission between components, ensures proper alignment and insulation, and overall contributes to the improved performance and reliability of electronic devices.

Original Abstract Submitted

Dual-damascene fully-aligned via interconnects with divot fill are provided. In one aspect, an interconnect structure includes: a first interlayer dielectric disposed on a wafer; a metal line(s) embedded in the first interlayer dielectric, where a top surface of the metal line(s) is recessed below a top surface of the first interlayer dielectric; a second interlayer dielectric disposed on the first interlayer dielectric; a conductive via(s) embedded in the second interlayer dielectric and aligned with the metal line(s); a barrier layer along a bottom and a first portion of a sidewall of the metal line(s); and a protective dielectric layer along a second portion of the sidewall of the metal line(s), where the barrier layer and the protective dielectric layer fully separate the metal line(s) from the first interlayer dielectric. A metal cap can be disposed on the metal line(s). A method of fabricating an interconnect structure is also provided.