18079373. METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
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METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
Organization Name
Inventor(s)
METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18079373 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
Simplified Explanation
The patent application describes a semiconductor light emitting device that has a rod-shaped structure with opposing surfaces and a side surface. It includes a first conductivity-type semiconductor, an active layer, and a second conductivity-type semiconductor. The device also has a first electrode layer on a vertically offset region of the first surface, connected to the first conductivity-type semiconductor, and a second electrode layer connected to the second conductivity-type semiconductor.
- The light emitting device has a rod-shaped structure with opposing surfaces and a side surface.
- It includes a first conductivity-type semiconductor, an active layer, and a second conductivity-type semiconductor.
- The first electrode layer is located on a vertically offset region of the first surface and is connected to the first conductivity-type semiconductor.
- The second electrode layer is connected to the second conductivity-type semiconductor.
Potential applications of this technology:
- Lighting: The semiconductor light emitting device can be used in various lighting applications, such as residential, commercial, and industrial lighting.
- Displays: The device can be utilized in display technologies, including LED displays and OLED displays.
- Automotive lighting: The technology can be applied in automotive lighting systems, including headlights, taillights, and interior lighting.
Problems solved by this technology:
- Improved efficiency: The rod-shaped structure and the vertically offset electrode region contribute to improved efficiency in light emission.
- Enhanced performance: The active layer and the specific design of the device result in enhanced performance in terms of brightness and color accuracy.
- Compact design: The rod-shaped structure allows for a compact design, making it suitable for various applications where space is limited.
Benefits of this technology:
- Energy efficiency: The improved efficiency of the light emitting device leads to energy savings and reduced environmental impact.
- High performance: The enhanced performance characteristics of the device result in brighter and more accurate lighting or display output.
- Versatility: The compact design and various applications make this technology versatile and suitable for different industries and settings.
Original Abstract Submitted
A semiconductor light emitting device includes a light emitting structure having a rod shape with first and second surfaces opposing each other and a side surface connected between the first and second surfaces, and including a first conductivity-type semiconductor providing the first surface, an active layer and a second conductivity-type semiconductor, a first electrode layer on a first region of the first surface of the light emitting structure and connected to the first conductivity-type semiconductor, the first region having a level that is vertically offset from a level of a second region adjacent thereto, and a second electrode layer connected to the second conductivity-type semiconductor.
