18078841. Method of Selective Metal Deposition Using Separated Reactant Activation and Plasma Discharging Zone simplified abstract (Applied Materials, Inc.)

Method of Selective Metal Deposition Using Separated Reactant Activation and Plasma Discharging Zone

Organization Name

Applied Materials, Inc.

Inventor(s)

Ying-Bing Jiang of San Jose CA (US)

Joung Joo Lee of San Jose CA (US)

Xianmin Tang of San Jose CA (US)

Jiang Lu of Milpitas CA (US)

Avgerinos V. Gelatos of Scotts Valley CA (US)

Dien-yeh Wu of San Jose CA (US)

Weifeng Ye of San Jose CA (US)

Yiyang Wan of Sunnyvale CA (US)

Gary How of Sunnyvale CA (US)

Joseph Hernandez of Sunnyvale CA (US)

Method of Selective Metal Deposition Using Separated Reactant Activation and Plasma Discharging Zone - A simplified explanation of the abstract

This abstract first appeared for US patent application 18078841 titled 'Method of Selective Metal Deposition Using Separated Reactant Activation and Plasma Discharging Zone

Simplified Explanation

The patent application describes a method of depositing a metal silicide on a substrate with a silicon-containing surface using plasma in a chemical vapor deposition chamber.

• Plasma is created with a first gas in the chamber between a lid heater and a showerhead.
• The first gas flows through the showerhead to an activation region in the chamber.
• A second gas containing a metal precursor is flowed through the showerhead to the activation region.
• The first and second gases are mixed to activate the second gas.
• The activated second gas is exposed to the silicon-containing surface of the substrate.

Key Features and Innovation

• Deposition of metal silicide on a substrate with a silicon-containing surface.
• Use of plasma in a chemical vapor deposition chamber.
• Separate flow of gases through the showerhead for activation.
• Mixing of gases to activate the metal precursor.
• Exposure of activated gas to the substrate surface.

Potential Applications

This technology can be applied in semiconductor manufacturing, specifically in the production of integrated circuits and other electronic devices.

Problems Solved

This method provides a more efficient and controlled way of depositing metal silicide on silicon-containing surfaces, improving the performance and reliability of electronic devices.

Benefits

• Enhanced deposition process for metal silicide.
• Improved quality and consistency of deposited material.
• Increased efficiency in semiconductor manufacturing.

Commercial Applications

Plasma-Assisted Metal Silicide Deposition in Semiconductor Manufacturing This technology can revolutionize the production of integrated circuits and electronic devices by offering a more precise and reliable method of depositing metal silicide on silicon substrates.

Prior Art

Research on plasma-assisted deposition techniques in semiconductor manufacturing can provide valuable insights into similar methods and technologies.

Frequently Updated Research

Ongoing studies on plasma activation methods and metal silicide deposition processes in semiconductor manufacturing can offer new advancements and optimizations for this technology.

Questions about Plasma-Assisted Metal Silicide Deposition

How does this method compare to traditional metal silicide deposition techniques?

This method offers improved control and efficiency in depositing metal silicide on silicon substrates compared to traditional techniques, leading to better performance in electronic devices.

What are the potential challenges in scaling up this technology for mass production?

Scaling up this technology for mass production may require optimization of plasma parameters, gas flow rates, and substrate handling to ensure consistent and reliable deposition results.

Original Abstract Submitted

Methods of depositing a metal silicide on a substrate are provided herein. In some embodiments, a method of depositing a metal silicide on a substrate having a silicon containing surface includes: creating a plasma comprising a first gas in a plasma region in a chemical vapor deposition (CVD) chamber, wherein the plasma region is disposed between a lid heater and a showerhead; flowing the first gas through a plurality of first openings of the showerhead to an activation region in the CVD chamber disposed between the showerhead and the substrate; flowing a second gas comprising a metal precursor in a non-plasma state through a plurality of second openings of the showerhead to the activation region, wherein the plurality of second openings are fluidly independent from the plurality of first openings within the showerhead; mixing the first gas with the second gas to activate the second gas in the activation region; and exposing the silicon containing surface of the substrate to the activated second gas.