18078454. SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS simplified abstract (International Business Machines Corporation)
Contents
SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS
Organization Name
International Business Machines Corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Koichi Motoyama of Clifton Park NY (US)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
Oleg Gluschenkov of Tannersville NY (US)
SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18078454 titled 'SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS
The semiconductor structure described in the patent application consists of two metallization layers, with the second layer positioned above the first layer. The second layer contains a set of metal-containing lines, with a portion of these lines located within the first metallization layer and separated from it by a dielectric barrier layer.
- The semiconductor structure includes a first metallization layer with metal-containing lines and a second metallization layer with additional metal-containing lines.
- Some of the metal-containing lines in the second layer are placed within the first metallization layer, isolated by a dielectric barrier layer.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices. - It may find applications in the development of high-performance electronic components.
Problems Solved: - Provides a method to integrate multiple metallization layers in a semiconductor structure. - Ensures proper isolation and functionality of metal-containing lines within the structure.
Benefits: - Enables more complex and efficient semiconductor designs. - Enhances the performance and reliability of electronic devices.
Commercial Applications: Title: Advanced Semiconductor Metallization Technology for Enhanced Device Performance This technology could be utilized in the production of cutting-edge electronic devices, improving their overall functionality and performance. It may have significant implications in industries such as telecommunications, computing, and consumer electronics.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching semiconductor metallization techniques and advancements in the field of semiconductor manufacturing.
Frequently Updated Research: Stay updated on the latest research and developments in semiconductor metallization processes to leverage the most current advancements in the industry.
Questions about Semiconductor Metallization Technology: 1. What are the key challenges in integrating multiple metallization layers in semiconductor structures? 2. How does the dielectric barrier layer contribute to the isolation of metal-containing lines within the semiconductor structure?
Original Abstract Submitted
A semiconductor structure includes a first metallization layer having a first plurality of metal containing lines, and a second metallization layer located above the first metallization layer. The second metallization layer includes a second plurality of metal containing lines. A first group of the second plurality of metal containing lines is disposed within the first metallization layer. The first group of the second plurality of metal containing lines is isolated from the first metallization layer by a dielectric barrier layer.
