18078245. ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES simplified abstract (International Business Machines Corporation)
Contents
ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES
Organization Name
International Business Machines Corporation
Inventor(s)
Ruqiang Bao of Niskayuna NY (US)
Michael P. Belyansky of Halfmoon NY (US)
Matt Malley of Averill Park NY (US)
ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18078245 titled 'ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES
The abstract describes a multi-layer stacked semiconductor device with two integrated circuit devices separated by bonding insulator layers.
- The device includes a first integrated circuit device with a bonding insulator layer consisting of an insulating material layer and an etch stop layer.
- A second integrated circuit device is formed over the first one in a stacked configuration, with a bonding insulator layer between them.
- The insulating material layer and the bonding insulator layer are bonded adjacent to one another, creating a secure connection between the integrated circuit devices.
Potential Applications: - This technology can be used in advanced electronic devices such as smartphones, tablets, and computers. - It can also be applied in high-performance computing systems and data centers.
Problems Solved: - Provides a reliable and efficient way to stack multiple integrated circuit devices in a semiconductor device. - Ensures proper insulation and protection between the integrated circuit devices.
Benefits: - Improved performance and functionality of electronic devices. - Enhanced reliability and durability of semiconductor devices.
Commercial Applications: - This technology has potential commercial applications in the consumer electronics industry, as well as in the telecommunications and computing sectors.
Questions about the technology: 1. How does the bonding insulator layer contribute to the overall performance of the semiconductor device? 2. What are the key differences between this multi-layer stacked semiconductor device and traditional single-layer devices?
Original Abstract Submitted
A multi-layer stacked semiconductor device includes a first integrated circuit device and a bonding insulator layer formed upon the first integrated circuit device. The bonding insulator layer includes an insulating material layer and an etch stop layer. The semiconductor device also includes a second integrated circuit device formed over the first integrated circuit device in a stacked configuration. The semiconductor device also includes a bonding insulator layer formed between the second integrated circuit device and the insulating material layer. The insulating material layer and the bonding insulator layer are bonded adjacent to one another.
