18077812. TWO STEP IMPLANT TO CONTROL TIP-TO-TIP DISTANCE BETWEEN TRENCHES simplified abstract (Applied Materials, Inc.)
Contents
TWO STEP IMPLANT TO CONTROL TIP-TO-TIP DISTANCE BETWEEN TRENCHES
Organization Name
Inventor(s)
John Hautala of Beverly MA (US)
Huixiong Dai of San Jose CA (US)
TWO STEP IMPLANT TO CONTROL TIP-TO-TIP DISTANCE BETWEEN TRENCHES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18077812 titled 'TWO STEP IMPLANT TO CONTROL TIP-TO-TIP DISTANCE BETWEEN TRENCHES
Abstract: Methods of processing patterned photoresist to control tip-to-tip distance on a semiconductor workpiece are disclosed. The method involves performing two implants at high tilt angles after the photoresist has been patterned and before the etching process begins. The implants are done using different species and at twist angles that align the trajectory of ions parallel to the photoresist lines. This technique allows ions to glance the top and sidewalls of the photoresist lines, reducing the tip-to-tip distance between them with minimal impact on critical dimensions.
- Two implants at high tilt angles are performed after photoresist patterning.
- Implants are done using different species.
- Twist angles align ion trajectory parallel to photoresist lines.
- Ions glance top and sidewalls of photoresist lines.
- Reduces tip-to-tip distance between patterned photoresist lines with minimal impact on critical dimensions.
Potential Applications: This technology can be applied in semiconductor manufacturing processes where precise control of tip-to-tip distance is crucial for device performance.
Problems Solved: This method addresses the challenge of controlling tip-to-tip distance between patterned photoresist lines on a semiconductor workpiece.
Benefits: - Improved control over tip-to-tip distance - Enhanced device performance - Minimized impact on critical dimensions
Commercial Applications: This technology can be valuable in the semiconductor industry for enhancing the quality and performance of semiconductor devices.
Prior Art: Prior research may exist in the field of semiconductor manufacturing processes and ion implantation techniques.
Frequently Updated Research: Ongoing research in semiconductor manufacturing and nanotechnology may provide further insights into optimizing tip-to-tip distance control on semiconductor workpieces.
Questions about Methods of Processing Patterned Photoresist: 1. How does the twist angle of ion implantation affect the tip-to-tip distance between patterned photoresist lines? 2. What are the potential implications of reducing the tip-to-tip distance on semiconductor device performance?
Original Abstract Submitted
Methods of processing patterned photoresist to control tip-to-tip distance on a semiconductor workpiece are disclosed. The method is performed after the photoresist has been patterned and before the etching process is commenced. Two implants, using different species, are performed at high tilt angles. In certain embodiments, the tilt angle may be 45° or more. Further, the implants are performed at twist angles such that the trajectory of the ions is nearly parallel to the patterned photoresist lines. In this way, the ions from the two implants glance the top and sidewalls of the photoresist lines. Using this technique, the tip-to-tip distance between patterned photoresist lines may be reduced with minimal impact on the CD.
