18077394. INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES simplified abstract (Intel Corporation)
Contents
- 1 INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Semiconductor Device Integration
- 1.13 Original Abstract Submitted
INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES
Organization Name
Inventor(s)
Hwichan Jun of Portland OR (US)
Guillaume Bouche of Hillsboro OR (US)
INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18077394 titled 'INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES
Simplified Explanation
The patent application discusses techniques to create semiconductor devices that combine finFET and gate-all-around (GAA) structures on the same substrate. These devices may have different gate oxide and shallow trench isolation thicknesses, with coplanar channel regions.
Key Features and Innovation
- Integration of finFET and GAA devices on a single substrate.
- Different gate oxide and STI thicknesses for each device.
- Coplanar channel regions for improved performance.
Potential Applications
The technology can be used in advanced semiconductor manufacturing for high-performance electronic devices such as processors, memory chips, and sensors.
Problems Solved
- Enhanced performance and efficiency in semiconductor devices.
- Improved scalability and integration of different device structures on a single substrate.
Benefits
- Increased performance and efficiency.
- Greater flexibility in device design and integration.
- Potential cost savings in manufacturing processes.
Commercial Applications
Title: Advanced Semiconductor Manufacturing for High-Performance Devices This technology has applications in the semiconductor industry for producing cutting-edge electronic components with improved performance and efficiency. It can benefit companies involved in the production of processors, memory chips, and sensors.
Prior Art
Readers can explore prior research in the field of semiconductor device integration, including studies on finFET and GAA structures, to understand the evolution of this technology.
Frequently Updated Research
Researchers are continually exploring new methods for integrating different semiconductor device structures to enhance performance and efficiency. Stay updated on the latest advancements in semiconductor manufacturing techniques.
Questions about Semiconductor Device Integration
What are the key challenges in integrating finFET and GAA structures on the same substrate?
Integrating finFET and GAA structures poses challenges in optimizing device performance and ensuring compatibility between different structures. Researchers are working to address these challenges through innovative manufacturing techniques and materials.
How does the integration of finFET and GAA devices impact overall device performance and efficiency?
The integration of finFET and GAA structures can lead to improved device performance, efficiency, and scalability. By combining different device structures on a single substrate, manufacturers can create advanced semiconductor devices with enhanced capabilities.
Original Abstract Submitted
Techniques to form semiconductor devices that include both finFET and gate-all-around (GAA) devices on same substrate. The finFET and GAA devices may have different gate oxide thicknesses and/or shallow trench isolation (STI) thicknesses, along with coplanar channel regions. In an example, a first semiconductor device includes a finFET structure with a first gate structure around or otherwise on a semiconductor fin while a second semiconductor device includes a GAA structure with a second gate structure around or otherwise on a plurality of semiconductor bodies (e.g., nanoribbons). The first gate structure includes a first gate dielectric and a first gate electrode (e.g., conductive material such as workfunction material and/or gate fill metal) and the second gate structure includes a second gate dielectric and a second gate electrode. The first gate dielectric includes a first gate oxide layer that is thicker than a second gate oxide layer of the second gate dielectric.
