18077374. GATE CONTROL FOR STAGGERED STACKED FIELD-EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)

GATE CONTROL FOR STAGGERED STACKED FIELD-EFFECT TRANSISTORS

Organization Name

International Business Machines Corporation

Inventor(s)

Genevieve Antoinette Kane of Albany NY (US)

Manasa Medikonda of Albany NY (US)

Md Nabil Azad of Malta NY (US)

Shravana Kumar Katakam of Lehi UT (US)

Nicholas Latham of Albany NY (US)

Indira Seshadri of Niskayuna NY (US)

Tao Li of Slingerlands NY (US)

GATE CONTROL FOR STAGGERED STACKED FIELD-EFFECT TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18077374 titled 'GATE CONTROL FOR STAGGERED STACKED FIELD-EFFECT TRANSISTORS

Simplified Explanation

The semiconductor device described in the patent application consists of two transistors stacked on top of each other in a staggered configuration, with a dielectric bonding layer in between. A gate cut portion is present along the sides of the gate regions of both transistors, and a gate contact is connected to at least one of the gate regions.

Key Features and Innovation

• Stacked configuration of two transistors
• Dielectric bonding layer between transistors
• Gate cut portion along sides of gate regions
• Gate contact connected to gate regions

Potential Applications

The technology can be applied in various semiconductor devices, integrated circuits, and electronic systems where compact and efficient transistor configurations are required.

Problems Solved

This innovation addresses the need for space-saving and high-performance semiconductor devices by enabling a stacked transistor configuration with improved connectivity and efficiency.

Benefits

• Compact design
• Improved performance
• Enhanced connectivity
• Efficient operation

Commercial Applications

The technology can be utilized in the development of advanced electronic devices, such as smartphones, tablets, laptops, and other consumer electronics, as well as in industrial applications requiring high-performance semiconductor components.

Prior Art

Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of semiconductor device design, transistor configurations, and dielectric bonding techniques.

Frequently Updated Research

Stay updated on the latest advancements in semiconductor device technology, transistor design, and dielectric materials to further enhance the efficiency and performance of stacked transistor configurations.

Questions about Semiconductor Device Technology

What are the key advantages of using a stacked transistor configuration in semiconductor devices?

A stacked transistor configuration allows for a more compact design, improved connectivity, and enhanced performance compared to traditional single-transistor layouts.

How does the dielectric bonding layer contribute to the efficiency of the semiconductor device?

The dielectric bonding layer provides insulation between the stacked transistors, reducing interference and improving overall functionality and reliability.

Original Abstract Submitted

A semiconductor device includes a first transistor comprising a first gate region, and a second transistor comprising a second gate region. The second transistor is stacked on the first transistor in a staggered configuration. A dielectric bonding layer is between the first transistor and the second transistor, and a gate cut portion is along a side of the first gate region and a side of the second gate region. A gate contact is connected to at least one of the first gate region and the second gate region.