18077225. ELECTROCHEMICAL REDUCTION OF SURFACE METAL OXIDES simplified abstract (Applied Materials, Inc.)

ELECTROCHEMICAL REDUCTION OF SURFACE METAL OXIDES

Organization Name

Applied Materials, Inc.

Inventor(s)

Yoon Ah Shin of Santa Clara CA (US)

Bencherki Mebarki of Santa Clara CA (US)

Joung Joo Lee of San Jose CA (US)

Xianmin Tang of San Jose CA (US)

Thai Cheng Chua of Cupertino CA (US)

Christian W. Valencia of Alhambra CA (US)

ELECTROCHEMICAL REDUCTION OF SURFACE METAL OXIDES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18077225 titled 'ELECTROCHEMICAL REDUCTION OF SURFACE METAL OXIDES

Simplified Explanation

Methods for reducing metal oxide layers to pure metal using microwave radiation are disclosed. These methods focus on reducing native metal oxides on metal interconnects within substrate features without damaging surrounding dielectric materials.

• The patent application focuses on reducing metal oxide layers to pure metal using microwave radiation.
• Specifically, the methods target native metal oxides on metal interconnects within substrate features with dielectric sidewalls.
• The surrounding dielectric materials remain undamaged by the processes described in the patent application.

Key Features and Innovation

• Reduction of metal oxide layers to pure metal using microwave radiation.
• Targeting native metal oxides on metal interconnects within substrate features with dielectric sidewalls.
• Preservation of surrounding dielectric materials during the reduction process.

Potential Applications

The technology could be applied in the semiconductor industry for the fabrication of integrated circuits and electronic devices.

Problems Solved

• Efficient reduction of metal oxide layers to pure metal.
• Preservation of surrounding dielectric materials during the process.

Benefits

• Improved efficiency in metal oxide reduction.
• Preservation of dielectric materials.
• Potential cost savings in semiconductor manufacturing processes.

Commercial Applications

• Title: "Microwave-Based Metal Oxide Reduction Technology for Semiconductor Manufacturing"
• This technology could be utilized in semiconductor manufacturing for the production of integrated circuits and electronic devices.
• Market implications include improved production efficiency and cost savings in the semiconductor industry.

Prior Art

Readers interested in prior art related to this technology could explore research papers and patents in the fields of semiconductor manufacturing, materials science, and microwave processing.

Frequently Updated Research

There may be ongoing research in the fields of materials science and semiconductor manufacturing related to the use of microwave radiation for metal oxide reduction.

Questions about Metal Oxide Reduction Technology

What are the potential environmental impacts of using microwave radiation for metal oxide reduction?

Using microwave radiation for metal oxide reduction could potentially reduce the environmental footprint of traditional reduction methods by minimizing the use of harmful chemicals and energy consumption.

How does the efficiency of metal oxide reduction using microwave radiation compare to conventional methods?

Metal oxide reduction using microwave radiation may offer higher efficiency and faster processing times compared to conventional reduction methods, leading to potential cost savings and increased productivity in semiconductor manufacturing.

Original Abstract Submitted

Embodiments of the disclosure relate to methods for reducing metal oxide layers to pure metal using microwave radiation. Specific embodiments provide methods of reducing a native metal oxide on a metal interconnect within a substrate feature comprising dielectric sidewalls. In some embodiments, surrounding dielectric materials are undamaged by the disclosed processes.