18074335. Method to Deposit Metal Cap for Interconnect simplified abstract (Applied Materials, Inc.)

Method to Deposit Metal Cap for Interconnect

Organization Name

Applied Materials, Inc.

Inventor(s)

Ge Qu of Sunnyvale CA (US)

Qihao Zhu of Sunnyvale CA (US)

Zheng Ju of Sunnyvale CA (US)

Yang Zhou of Milpitas CA (US)

Jiajie Cen of San Jose CA (US)

Feng Q. Liu of San Jose CA (US)

Zhiyuan Wu of San Jose CA (US)

Feng Chen of San Jose CA (US)

Kevin Kashefi of San Ramon CA (US)

Xianmin Tang of San Jose CA (US)

Jeffrey W. Anthis of Santa Clara CA (US)

Mark Joseph Saly of Milpitas CA (US)

Method to Deposit Metal Cap for Interconnect - A simplified explanation of the abstract

This abstract first appeared for US patent application 18074335 titled 'Method to Deposit Metal Cap for Interconnect

Simplified Explanation

The patent application describes methods for depositing a metal cap for an interconnect by using an alkyl halide and a ruthenium metal precursor on a substrate.

Key Features and Innovation

• Method involves contacting substrate with alkyl halide and ruthenium metal precursor.
• Formation of metal cap for interconnect.
• Innovative approach to depositing metal cap.

Potential Applications

The technology can be applied in semiconductor manufacturing, electronics industry, and microchip production.

Problems Solved

Addresses the need for a reliable and efficient method to deposit metal caps for interconnects in electronic devices.

Benefits

• Improved performance of interconnects.
• Enhanced reliability of electronic devices.
• Cost-effective manufacturing process.

Commercial Applications

• Semiconductor fabrication.
• Electronics manufacturing.
• Microchip production for various devices.

Prior Art

Readers can explore prior research on metal deposition methods in semiconductor industry and related fields.

Frequently Updated Research

Stay updated on advancements in metal cap deposition techniques for interconnects in electronic devices.

Questions about Metal Cap Deposition

What are the key components required for depositing a metal cap for an interconnect?

The key components include an alkyl halide and a ruthenium metal precursor.

How does the method of depositing a metal cap improve the performance of interconnects?

The method ensures a reliable and efficient deposition process, leading to enhanced performance of interconnects in electronic devices.

Original Abstract Submitted

Methods to deposit a metal cap for an interconnect are disclosed. In embodiments, a method comprises contacting the substrate with an alkyl halide and a ruthenium metal precursor to form a metal cap for an interconnect.