18074197. MULTI-PULSE DEPOSITION PROCESSES simplified abstract (Applied Materials, Inc.)
Contents
- 1 MULTI-PULSE DEPOSITION PROCESSES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MULTI-PULSE DEPOSITION PROCESSES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Metal-Containing Film Deposition Technology
- 1.13 Original Abstract Submitted
MULTI-PULSE DEPOSITION PROCESSES
Organization Name
Inventor(s)
Tianyi Huang of Santa Clara CA (US)
Srinivas Gandikota of Santa Clara CA (US)
Yixiong Yang of Fremont CA (US)
Elizabeth Mao of Sunnyvale CA (US)
Chi-Chou Lin of San Jose CA (US)
MULTI-PULSE DEPOSITION PROCESSES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18074197 titled 'MULTI-PULSE DEPOSITION PROCESSES
Simplified Explanation
The patent application describes a method for improving control over the formation of metal-containing films on substrate surfaces using atomic layer deposition processes.
- Metal-containing film formation with improved control
- Greater growth per cycle and higher throughput
- Precursor/reactant pulse/purge time control
- Use of inert carrier gas and metal-containing precursor/reactant pulses
- Mini purge interruptions to prevent precursor/reactant depletion
Key Features and Innovation
- Enhanced control over precursor/reactant pulse/purge time - Increased growth per cycle and throughput - Utilization of inert carrier gas and metal-containing precursors/reactants - Mini purge interruptions to prevent depletion of precursors/reactants
Potential Applications
This technology can be applied in the semiconductor industry for the precise deposition of metal-containing films on substrates, leading to improved performance and reliability of electronic devices.
Problems Solved
- Lack of control over precursor/reactant pulse/purge time - Limited growth per cycle and throughput in traditional ALD processes - Precursor/reactant depletion issues during film formation
Benefits
- Enhanced control and precision in film deposition - Increased efficiency and productivity in the manufacturing process - Improved quality and performance of metal-containing films
Commercial Applications
Title: Advanced Metal-Containing Film Deposition Technology for Semiconductor Manufacturing This technology can be utilized in semiconductor fabrication facilities to enhance the production of high-quality electronic components, leading to improved device performance and reliability.
Prior Art
Readers can explore prior research on atomic layer deposition processes, metal film deposition techniques, and semiconductor manufacturing methods to gain a deeper understanding of the advancements presented in this patent application.
Frequently Updated Research
Researchers are continuously exploring new methods and materials for thin film deposition in the semiconductor industry, with a focus on improving control, efficiency, and performance of electronic devices.
Questions about Metal-Containing Film Deposition Technology
How does this technology improve control over film formation compared to traditional methods?
This technology offers precise control over precursor/reactant pulse/purge time, leading to enhanced growth per cycle and higher throughput during film deposition.
What are the potential applications of this technology beyond semiconductor manufacturing?
This technology can also be applied in other industries requiring precise metal film deposition, such as optics, sensors, and energy storage devices.
Original Abstract Submitted
Embodiments of the present disclosure advantageously provide improved control over precursor/reactant pulse/purge time, greater growth per cycle, and higher throughput during formation of a metal-containing film on a substrate surface (including substrate surfaces having at least one feature) compared to traditional atomic layer deposition (ALD) processes. In some embodiments, forming the metal-containing film comprises exposing a substrate to a constant flow of an inert carrier gas and a co-flow of a pulse of a metal-containing precursor and a pulse of a reactant. The pulse of the metal-containing precursor and the pulse of the reactant may be interrupted by a mini purge. The metal-containing precursor and/or the reactant may be charged during the mini purge to avoid precursor/reactant depletion.
