18072675. PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 PHASE CHANGE MEMORY
PHASE CHANGE MEMORY
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
Julien Frougier of ALBANY NY (US)
Ruilong Xie of Niskayuna NY (US)
PHASE CHANGE MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18072675 titled 'PHASE CHANGE MEMORY
Simplified Explanation
The patent application describes an apparatus that includes a phase-change-memory bridge between two electrodes on a substrate, which can switch between low and high resistance solid phases.
- The apparatus includes a substrate with an upper face.
- A first electrode is attached to the upper face of the substrate.
- A second electrode is attached to the upper face of the substrate at a distance from the first electrode.
- A bridge of phase-change-memory material is attached to and lies along the upper face of the substrate between and electrically connecting the first and second electrodes.
- The bridge is thermally switchable between a low resistance solid phase and a high resistance solid phase.
- Access devices are disposed between the electrodes and the substrate, with the bridge being electrically connected between the access devices.
Potential Applications
This technology could be applied in:
- Non-volatile memory devices
- Reconfigurable electronic circuits
Problems Solved
This technology helps in:
- Improving data storage and retrieval speed
- Enhancing energy efficiency in electronic devices
Benefits
The benefits of this technology include:
- Faster data processing
- Lower power consumption
- Increased reliability in electronic systems
Potential Commercial Applications
The potential commercial applications of this technology include:
- Memory storage devices for consumer electronics
- Reconfigurable electronic components for industrial applications
Possible Prior Art
One possible prior art for this technology could be the development of phase-change memory devices for data storage in electronic devices.
Unanswered Questions
How does the thermal switching process affect the overall performance of the apparatus?
The thermal switching process in the phase-change-memory bridge is crucial for its operation, but the specific impact on the overall performance of the apparatus is not detailed in the abstract. Further research and testing may be needed to understand this aspect better.
What are the potential challenges in scaling up this technology for mass production?
While the abstract describes the basic components and functionality of the apparatus, it does not address the scalability of the technology for mass production. Factors such as cost, manufacturing processes, and reliability at scale could pose challenges that need to be explored further.
Original Abstract Submitted
An apparatus includes a substrate that has an upper face; a first electrode that is attached to the upper face of the substrate; a second electrode that is attached to the upper face of the substrate at a distance from the first electrode; and a bridge of phase-change-memory material that is attached to and lies along the upper face of the substrate between and electrically connecting the first and second electrodes. At least a portion of the bridge is thermally switchable between a low resistance solid phase and a high resistance solid phase. In some embodiments, the apparatus also includes access devices that are disposed between the electrodes and the substrate, with the bridge being electrically connected between the access devices. At least a portion of the bridge is thermally switchable between a low resistance solid phase and a high resistance solid phase.
