18072564. FABRICATION OF INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORMITY AMONG VARYING GATE TRENCH WIDTHS simplified abstract (Intel Corporation)

FABRICATION OF INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORMITY AMONG VARYING GATE TRENCH WIDTHS

Organization Name

Intel Corporation

Inventor(s)

Venkata Aditya Addepalli of Portland OR (US)

Shyam Benegal Kadali of Portland OR (US)

FABRICATION OF INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORMITY AMONG VARYING GATE TRENCH WIDTHS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18072564 titled 'FABRICATION OF INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORMITY AMONG VARYING GATE TRENCH WIDTHS

Simplified Explanation

The integrated circuit structure described in the patent application aims to achieve uniformity among varying gate trench widths. This is accomplished by having a gate electrode layer with portions along the bottom and partially along the sidewalls of different gate trenches, ensuring consistent coverage across trenches of different widths.

• The patent application describes an integrated circuit structure with varying gate trench widths.
• The structure includes a gate electrode layer with portions along the bottom and partially along the sidewalls of different trenches.
• The gate electrode layer ensures uniform coverage across trenches of different widths.

Potential Applications

The technology described in the patent application could be applied in the manufacturing of integrated circuits where uniformity among varying gate trench widths is crucial for device performance and reliability.

Problems Solved

This technology addresses the challenge of maintaining uniformity in gate trench structures with different widths, which can impact the overall performance and reliability of integrated circuits.

Benefits

The benefits of this technology include improved consistency in gate trench structures, leading to enhanced device performance and reliability in integrated circuits.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry for the production of advanced integrated circuits with precise gate trench structures.

Possible Prior Art

One possible prior art in this field could be the use of specialized deposition techniques to achieve uniform coverage in gate trench structures with varying widths.

How does this technology compare to existing methods for achieving uniformity in gate trench structures?

This article does not provide a direct comparison with existing methods or technologies for achieving uniformity in gate trench structures.

What are the potential limitations or challenges in implementing this technology on a larger scale in semiconductor manufacturing?

The article does not address potential limitations or challenges in scaling up the implementation of this technology in semiconductor manufacturing processes.

Original Abstract Submitted

Integrated circuit structures having uniformity among varying gate trench widths are described. For example, an integrated circuit structure includes a first fin, and a first gate trench over the first fin, the first gate trench having a first width. The integrated circuit structure also includes a second fin, and a second gate trench over the second fin, the second gate trench having a second width greater than the first width. The integrated circuit structure also includes a gate electrode layer having a first portion along a bottom and partially along sidewalls of the first trench, and the gate electrode layer having a second portion along a bottom and partially along sidewalls of the second trench, wherein the first portion extends along the sidewalls of the first trench to approximately the same extent as the second portion extends along the sidewalls of the second trench.