18072515. LDMOS DEVICE AND METHOD OF FABRICATION OF SAME simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
Contents
- 1 LDMOS DEVICE AND METHOD OF FABRICATION OF SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LDMOS DEVICE AND METHOD OF FABRICATION OF SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
LDMOS DEVICE AND METHOD OF FABRICATION OF SAME
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Jingjing Chen of Santa Clara CA (US)
LDMOS DEVICE AND METHOD OF FABRICATION OF SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18072515 titled 'LDMOS DEVICE AND METHOD OF FABRICATION OF SAME
Simplified Explanation
The abstract describes an LDMOS device with a semiconductor substrate, epitaxial layer, drain region, source region, gate shield, and deep trench contact.
- LDMOS device with semiconductor substrate and epitaxial layer
- Drain region formed in drain drift region
- Source region formed in body region
- Gate shield with variable length tied to source
- Body connection via deep trench contact
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Power amplifiers
- RF transmitters
- Switching applications
Problems Solved
The technology addresses the following issues:
- Improved power efficiency
- Enhanced performance in high-frequency applications
Benefits
The technology offers the following benefits:
- Higher power handling capability
- Better thermal performance
- Increased reliability
Potential Commercial Applications
The potential commercial applications of this technology could include:
- Wireless communication devices
- Radar systems
- Satellite communication systems
Possible Prior Art
One possible prior art for this technology could be the development of LDMOS devices with similar features in the semiconductor industry.
Unanswered Questions
How does the gate shield with variable length improve device performance?
The gate shield with variable length is designed to optimize the electrical characteristics of the device, but the specific mechanisms behind this improvement are not detailed in the abstract.
What are the specific advantages of the deep trench contact for the body connection?
While the abstract mentions the deep trench contact for the body connection, it does not elaborate on the specific benefits or advantages of this design feature.
Original Abstract Submitted
An LDMOS device includes a semiconductor substrate with an epitaxial layer that comprises a body region and a drain drift region. A drain region is formed in the drain drift region and a source region is formed in the body region. A gate shield may be formed over a gate shield dielectric layer disposed over a gate electrode, the gate shield having a variable length and tied to the source that is provided with a body connection via a deep trench contact.
