18071974. SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Jennifer Toy of San Leandro CA (US)
Alexander Reznicek of Troy NY (US)
Jingyun Zhang of Albany NY (US)
Sagarika Mukesh of Albany NY (US)
SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18071974 titled 'SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER
Simplified Explanation
The semiconductor structure described in the abstract includes a nanosheet channel stack with one or more layers of a semiconducting material, an insulator layer, an epitaxial oxide spacer layer, shallow trench isolation regions, and a gate surrounding the nanosheet channel stack.
- The nanosheet channel stack provides nanosheet channels for one or more nanosheet field-effect transistors.
- The epitaxial oxide spacer layer is disposed on outer ends of the insulator layer and extends downwardly into the substrate.
- Shallow trench isolation regions are disposed adjacent the nanosheet channel stack and extend downwardly from the top surface of the semiconductor substrate.
- A portion of each shallow trench isolation region is disposed on an outer sidewall of the respective epitaxial oxide spacer layer.
- The gate surrounds the nanosheet channel stack and is on the top surface of each shallow trench isolation region.
Potential Applications
This semiconductor structure could be used in advanced electronic devices such as smartphones, tablets, and computers to improve performance and energy efficiency.
Problems Solved
This technology helps to address the challenges of scaling down semiconductor devices to smaller sizes while maintaining or improving their functionality.
Benefits
The benefits of this technology include increased speed, reduced power consumption, and enhanced overall performance of electronic devices.
Potential Commercial Applications
Potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and research institutions working on next-generation semiconductor devices.
Possible Prior Art
One possible prior art for this technology could be the development of nanosheet field-effect transistors and advanced semiconductor structures in the field of nanotechnology.
Unanswered Questions
How does this semiconductor structure compare to traditional transistor designs in terms of performance and efficiency?
This article does not provide a direct comparison between this semiconductor structure and traditional transistor designs.
What are the potential challenges in manufacturing and implementing this semiconductor structure on a large scale?
The article does not address the potential challenges in manufacturing and implementing this semiconductor structure on a large scale.
Original Abstract Submitted
A semiconductor structure includes a nanosheet channel stack disposed on a semiconductor substrate. The nanosheet channel stack includes one or more layers of a semiconducting material providing nanosheet channels for one or more nanosheet field-effect transistors and an insulator layer as the bottom most layer disposed on the semiconductor substrate. The semiconductor structure further includes an epitaxial oxide spacer layer disposed on outer ends of a bottom surface of the insulator layer and extending downwardly into the substrate; shallow trench isolation regions disposed adjacent the nanosheet channel stack and extending downwardly from a top surface of the semiconductor substrate, wherein a portion of each of the shallow trench isolation regions is disposed on an outer sidewall of the respective epitaxial oxide spacer layer; and a gate surrounding the nanosheet channel stack and on a top surface of each of the shallow trench isolation regions.
