18071740. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
VARIABLE RESISTANCE MEMORY DEVICE
Organization Name
Inventor(s)
Jeonghee Park of Hwaseong-si (KR)
VARIABLE RESISTANCE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18071740 titled 'VARIABLE RESISTANCE MEMORY DEVICE
Simplified Explanation
The abstract describes a variable resistance memory device that includes a substrate, conductive lines, and a memory cell with specific layers. The variable resistance layer has a unique shape.
- The patent application describes a variable resistance memory device.
- The device includes a substrate, conductive lines, and a memory cell.
- The memory cell has a selection element layer, an intermediate electrode layer, and a variable resistance layer.
- The variable resistance layer has a shape of stairs with a concave center.
Potential Applications
This technology has potential applications in various fields, including:
- Data storage devices
- Computer memory systems
- Electronic devices requiring non-volatile memory
Problems Solved
The technology solves several problems in memory devices, such as:
- Limited storage capacity
- High power consumption
- Slow read and write speeds
Benefits
The benefits of this technology include:
- Increased storage capacity
- Reduced power consumption
- Faster read and write speeds
- Improved reliability and durability
Original Abstract Submitted
A variable resistance memory device includes a substrate, a first conductive line on the substrate, the first conductive line extending in a first horizontal direction, a second conductive line extending on the first conductive line in a second horizontal direction perpendicular to the first horizontal direction, and a memory cell at an intersection between the first conductive line and the second conductive line, the memory cell having a selection element layer, an intermediate electrode layer, and a variable resistance layer, and the variable resistance layer having a shape of stairs with a concave center.
