18070050. NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Ruqiang Bao of Niskayuna NY (US)
Dechao Guo of Niskayuna NY (US)
NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18070050 titled 'NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS
Simplified Explanation
The abstract describes a patent application related to semiconductor devices and methods of forming the same, involving transistors with different work function metal layers in different regions.
- The first transistor in a first region has a first work function metal layer.
- The second transistor in a second region has a second work function metal layer that overlaps a portion of the first work function metal layer and has a vertical part above it.
Potential Applications
This technology could be applied in:
- Advanced electronic devices
- Integrated circuits
- Semiconductor manufacturing
Problems Solved
This technology helps in:
- Improving transistor performance
- Enhancing device efficiency
- Reducing power consumption
Benefits
The benefits of this technology include:
- Increased functionality of semiconductor devices
- Enhanced overall performance
- Potential for smaller and more efficient devices
Potential Commercial Applications
This technology could be commercially applied in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art could be:
- Previous methods of forming transistors with different work function metal layers
- Research on improving semiconductor device performance
Unanswered Questions
How does this technology compare to existing methods of transistor formation?
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages of this new approach.
What specific improvements in device performance can be expected with this technology?
While the benefits are mentioned, the article does not delve into the quantitative or qualitative improvements that can be achieved with the implementation of this technology.
Original Abstract Submitted
Semiconductor devices and methods of forming the same include a first transistor in a first region having a first work function metal layer. A second transistor in a second region has a second work function metal layer that overlaps a portion of the first work function metal layer and that has a vertical part above the portion of the first work function metal layer.
