18070030. Method of Conductive Material Deposition simplified abstract (Tokyo Electron Limited)

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Method of Conductive Material Deposition

Organization Name

Tokyo Electron Limited

Inventor(s)

Hirokazu Aizawa of Albany NY (US)

Kai-Hung Yu of Albany NY (US)

Nicholas Joy of Albany NY (US)

Yusuke Yoshida of Albany NY (US)

Kandabara Tapily of Albany NY (US)

Method of Conductive Material Deposition - A simplified explanation of the abstract

This abstract first appeared for US patent application 18070030 titled 'Method of Conductive Material Deposition

Simplified Explanation

The method described in the abstract involves processing a substrate by depositing filling material, patterning the material, filling with conductive material, etching, and performing an etch back process.

  • Depositing filling material over the substrate with first and second recesses
  • Patterning the filling material to reopen the first recess
  • Filling the first recess with conductive material to a first height
  • Selectively etching the filling material to reopen the second recess
  • Filling the remaining recesses with conductive material
  • Performing an etch back process to fill the recesses with conductive material to a second height

Potential Applications

This technology could be applied in the semiconductor industry for manufacturing electronic devices, such as integrated circuits and microprocessors.

Problems Solved

This method solves the problem of efficiently filling recesses on a substrate with conductive material, which is crucial for the proper functioning of electronic components.

Benefits

The benefits of this technology include improved conductivity, enhanced performance of electronic devices, and increased reliability of the manufacturing process.

Potential Commercial Applications

A potential commercial application of this technology could be in the production of advanced electronic devices for various industries, including telecommunications, automotive, and consumer electronics.

Possible Prior Art

One possible prior art for this technology could be similar methods used in the semiconductor industry for filling recesses with conductive material in electronic devices.

Unanswered Questions

How does this method compare to traditional methods of filling recesses with conductive material?

This article does not provide a direct comparison to traditional methods, leaving the reader to wonder about the efficiency and effectiveness of this new method.

What are the specific materials used in this process and how do they impact the final product?

The article does not delve into the specific materials used in the process or their effects on the final product, leaving room for further exploration and understanding.


Original Abstract Submitted

A method for processing a substrate that includes: depositing a filling material over the substrate including a first recess and a second recess, the filling material filling the first recess and the second recess; patterning the filling material such that the first recess is reopened while the second recess remains filled with the filling material; filling the first recess with a conductive material to a first height; etching the filling material selectively to the conductive material to reopen the second recess; filling a remainder of the first recess and the second recess with the conductive material; and performing an etch back process to etch the conductive material such that the first recess and the second recess are filled with the conductive material to a second height.