18069769. RESISTIVE RANDOM ACCESS MEMORY ON A BURIED BITLINE simplified abstract (International Business Machines Corporation)
Contents
RESISTIVE RANDOM ACCESS MEMORY ON A BURIED BITLINE
Organization Name
International Business Machines Corporation
Inventor(s)
Biswanath Senapati of Mechanicville NY (US)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
Lawrence A. Clevenger of Saratoga Springs NY (US)
Albert M. Chu of Nashua NH (US)
Ruilong Xie of Niskayuna NY (US)
RESISTIVE RANDOM ACCESS MEMORY ON A BURIED BITLINE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18069769 titled 'RESISTIVE RANDOM ACCESS MEMORY ON A BURIED BITLINE
The abstract describes a semiconductor structure with a resistive random access memory located on a surface of a bitline embedded in a shallow trench isolation structure. Additionally, the structure may include a source line above the bitline or embedded in the shallow trench isolation structure.
- The semiconductor structure features a resistive random access memory integrated with a bitline in a shallow trench isolation structure.
- A source line is also included, positioned either above the bitline or within the shallow trench isolation structure.
Potential Applications:
- This technology could be used in various electronic devices requiring non-volatile memory.
- It may find applications in data storage systems, consumer electronics, and industrial automation.
Problems Solved:
- Provides a compact and efficient solution for integrating resistive random access memory in semiconductor structures.
- Enhances the performance and reliability of memory systems in electronic devices.
Benefits:
- Improved memory integration in semiconductor devices.
- Enhanced performance and reliability of memory systems.
- Potential for smaller and more efficient electronic devices.
Commercial Applications:
- Memory modules for computers and servers.
- Solid-state drives for data storage.
- Embedded memory in smartphones and tablets.
Questions about the Technology: 1. How does the integration of resistive random access memory with a bitline improve semiconductor structures? 2. What are the advantages of having a source line positioned above the bitline or within the shallow trench isolation structure?
Original Abstract Submitted
A semiconductor structure is provided that includes a resistive random access memory located on a surface of a bitline that is embedded in a shallow trench isolation structure. The structure can further include a source line that is present above the bitline or embedded in the shallow trench isolation structure.
