18068992. COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT simplified abstract (QUALCOMM Incorporated)

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COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT

Organization Name

QUALCOMM Incorporated

Inventor(s)

Xia Li of San Diego CA (US)

Junjing Bao of San Diego CA (US)

Giridhar Nallapati of San Diego CA (US)

COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18068992 titled 'COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT

Simplified Explanation: The patent application describes complementary field effect transistors (CFETs) with balanced n and p drive current, created using horizontal p-doped and n-doped nanosheet channels in separate vertical stacks.

  • CFETs have balanced n and p drive current
  • Horizontal p-doped nanosheet channels in first vertical stack for nFET
  • Horizontal n-doped nanosheet channels in second vertical stack for pFET
  • Channels connect source and drain contacts through gate-all-around (GAA) regions
  • Width to length ratio (W/L) is not equal for n and p channels

Key Features and Innovation:

  • CFET structure with balanced n and p drive current
  • Use of horizontal p-doped and n-doped nanosheet channels in separate vertical stacks
  • Channels connected through gate-all-around (GAA) regions
  • Non-equal width to length ratio (W/L) for n and p channels

Potential Applications:

  • Advanced semiconductor devices
  • High-performance integrated circuits
  • Power-efficient electronics

Problems Solved:

  • Imbalance in n and p drive current in traditional transistors
  • Inefficiencies in power consumption
  • Limitations in semiconductor device performance

Benefits:

  • Improved performance and efficiency
  • Enhanced power management
  • Increased reliability of electronic devices

Commercial Applications: Advanced Semiconductor Technology for High-Performance Electronics

Prior Art: Research on CFET structures and balanced drive current in field effect transistors.

Frequently Updated Research: Ongoing studies on nanosheet channel technology and its applications in semiconductor devices.

Questions about CFETs: 1. How do CFETs differ from traditional field effect transistors? 2. What are the potential challenges in implementing CFET technology in commercial electronics?


Original Abstract Submitted

Disclosed are complementary field effect transistors (CFETs) with balanced n and p drive current, and methods for making the same. In an aspect, a CFET structure comprises an nFET with horizontal p-doped nanosheet channels arranged in a first vertical stack, each horizontal p-doped nanosheet channel having a width W, and connecting a first source contact to a first drain contact through a first gate-all-around (GAA) region having a length L. The CFET structure further comprises a pFET with horizontal n-doped nanosheet channels arranged in a second vertical stack disposed on the first vertical stack, each horizontal n-doped nanosheet channel having a width W, and connecting a second source contact to a second drain contact through a second GAA region having a length L, wherein W/L is not equal to W/L

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