18067968. STACKED TRANSISTORS WITH STEPPED CONTACTS simplified abstract (International Business Machines Corporation)
Contents
STACKED TRANSISTORS WITH STEPPED CONTACTS
Organization Name
International Business Machines Corporation
Inventor(s)
Indira Seshadri of Niskayuna NY (US)
Jay William Strane of Warwick NY (US)
STACKED TRANSISTORS WITH STEPPED CONTACTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18067968 titled 'STACKED TRANSISTORS WITH STEPPED CONTACTS
The abstract of this patent application describes semiconductor devices and methods of forming them, involving a lower semiconductor device over a substrate with a first width, an upper semiconductor device with a second width smaller than the first width, and a dielectric structure with sidewalls aligning vertically with the lower semiconductor device.
- Lower semiconductor device over a substrate with a first width
- Upper semiconductor device with a second width smaller than the first width
- Dielectric structure with sidewalls aligning vertically with the lower semiconductor device
- Innovative method of forming semiconductor devices with different widths
- Improved vertical alignment of sidewalls for enhanced device performance
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry
Problems Solved: - Enhanced device performance - Improved manufacturing processes - Better integration of semiconductor devices
Benefits: - Higher efficiency - Improved functionality - Enhanced device reliability
Commercial Applications: Title: "Advanced Semiconductor Devices for Enhanced Performance" This technology can be used in various commercial applications such as: - Consumer electronics - Telecommunications - Automotive industry
Questions about Semiconductor Devices: 1. How does the vertical alignment of sidewalls impact the performance of semiconductor devices?
- The vertical alignment of sidewalls helps in improving device efficiency and reliability by ensuring better integration and functionality.
2. What are the potential challenges in manufacturing semiconductor devices with different widths?
- The challenges may include precise control of dimensions and alignment to achieve the desired performance outcomes.
Original Abstract Submitted
Semiconductor devices and methods of forming the same include a lower semiconductor device over a substrate, the lower semiconductor device having a first width. An upper semiconductor device is over the lower semiconductor device. The upper semiconductor device has a second width smaller than the first width. A dielectric structure is over the lower semiconductor device and has a first sidewall that faces the upper semiconductor device and a second sidewall that aligns vertically with a sidewall of the lower semiconductor device.
