18067710. SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)

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SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION

Organization Name

International Business Machines Corporation

Inventor(s)

Andrew Gaul of Halfmoon NY (US)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Andrew M. Greene of Slingerlands NY (US)

SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18067710 titled 'SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION

The semiconductor device described in the patent application consists of a substrate supporting a stack of nanosheets. Within the stack, there are multiple semiconductor channels, including a top channel. A gate body, comprising a layer of metal on top of the top channel, is connected to the top channel. A spacer body with a top dielectric layer positioned on top of the metal layer determines the thickness of the metal layer above the top channel based on the distance between the bottom surface of the top dielectric layer and the top surface of the top channel.

  • The semiconductor device includes a stack of nanosheets supported by a substrate.
  • Within the stack, there are multiple semiconductor channels, including a top channel.
  • A gate body, consisting of a layer of metal, is connected to the top channel.
  • A spacer body with a top dielectric layer determines the thickness of the metal layer above the top channel.

Potential Applications: - Advanced semiconductor technology - High-performance computing - Nanoelectronics research and development

Problems Solved: - Enhanced performance and efficiency in semiconductor devices - Improved control over semiconductor channels - Potential for smaller and more powerful electronic devices

Benefits: - Increased speed and efficiency in electronic devices - Potential for smaller and more compact devices - Enhanced control and precision in semiconductor technology

Commercial Applications: Title: Advanced Semiconductor Devices for Next-Generation Electronics This technology could revolutionize the semiconductor industry by enabling faster and more efficient electronic devices. It has the potential to be used in a wide range of applications, from consumer electronics to industrial equipment, where high-performance computing is essential.

Questions about Semiconductor Devices: 1. How does the use of nanosheets in semiconductor devices improve performance? 2. What are the potential challenges in implementing this technology on a larger scale?


Original Abstract Submitted

A semiconductor device includes a substrate and a stack of nanosheets supported by the substrate. A plurality of semiconductor channels in the stack of nanosheets includes a top channel. A gate body is coupled to the top channel. The gate body includes a layer of metal positioned on top of the top channel. A spacer body includes a top dielectric layer positioned on top of the layer of metal. A thickness of the layer of metal above the top channel is based on a distance from a bottom surface of the top dielectric layer to a top surface of the top channel.

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