18067029. STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES simplified abstract (International Business Machines Corporation)

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STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES

Organization Name

International Business Machines Corporation

Inventor(s)

Shogo Mochizuki of Mechanicville NY (US)

Gen Tsutsui of Glenmont NY (US)

STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18067029 titled 'STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES

The abstract describes a semiconductor device with a stacked field effect transistor (FET) structure, consisting of a bottom FET device with a vertically stacked gate-all-around (GAA) nanosheet structure and a first channel orientation, and a top FET device isolated from the bottom device with a horizontally stacked structure and a second channel orientation different from the first.

  • The semiconductor device features a stacked FET structure with both vertical and horizontal components.
  • The bottom FET device includes a GAA nanosheet structure for improved performance.
  • The top FET device is isolated from the bottom device and has a different channel orientation.
  • The innovative design allows for enhanced functionality and efficiency in semiconductor devices.
  • The combination of vertical and horizontal FET structures offers unique advantages in performance and design flexibility.

Potential Applications: - Advanced electronics - Semiconductor manufacturing - Integrated circuits

Problems Solved: - Improved performance in semiconductor devices - Enhanced design flexibility - Increased efficiency in electronic components

Benefits: - Higher performance capabilities - Greater design flexibility - Improved efficiency in semiconductor devices

Commercial Applications: Title: Advanced Semiconductor Devices with Stacked FET Structure This technology can be utilized in various commercial applications such as: - Consumer electronics - Telecommunications - Automotive industry

Questions about Semiconductor Devices with Stacked FET Structure: 1. How does the GAA nanosheet structure improve the performance of the bottom FET device? The GAA nanosheet structure enhances control over the flow of current in the semiconductor device, leading to improved efficiency and performance.

2. What are the key differences between the channel orientations of the bottom and top FET devices? The bottom FET device has a first channel orientation, while the top FET device has a second channel orientation, allowing for different functionalities and performance characteristics.


Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes a stacked field effect transistor (FET) structure. The stacked FET structure includes a bottom FET device and a top FET device. The bottom FET device has a vertically stacked gate-all-around (GAA) nanosheet (NS) structure and a first channel orientation. The top FET device is isolated from the bottom device and has a horizontally stacked structure and a second channel orientation differing from the first channel orientation.

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