18066243. CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE simplified abstract (International Business Machines Corporation)

CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Huai Huang of Clifton Park NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Koichi Motoyama of Clifton Park NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Hosadurga Shobha of Niskayuna NY (US)

Albert M. Chu of Nashua NH (US)

CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18066243 titled 'CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE

The semiconductor structure described in the patent application features improved backside metal contacts for field effect transistors, with a backside power rail connected to source/drain regions through these contacts.

• The structure includes a plurality of source/drain regions within the transistor.
• A backside metal contact is electrically connected to at least one source/drain region.
• The backside metal contact has a first taper profile.
• A backside power rail is connected to the source/drain region through the backside metal contact.
• The backside power rail has a second taper profile different from the first taper profile.

Potential Applications: - Semiconductor manufacturing - Electronics industry - Power management systems

Problems Solved: - Improved electrical connections in semiconductor structures - Enhanced performance of field effect transistors - Better power distribution within the device

Benefits: - Increased efficiency in power management - Enhanced reliability of electronic devices - Improved overall performance of semiconductor structures

Commercial Applications: Title: Enhanced Backside Metal Contacts for Semiconductor Devices This technology could be utilized in various electronic devices, power management systems, and semiconductor manufacturing processes, leading to more efficient and reliable products in the market.

Questions about the technology: 1. How does the first taper profile of the backside metal contact contribute to the overall performance of the semiconductor structure? 2. What are the specific advantages of having a backside power rail with a different taper profile from the backside metal contact?

Original Abstract Submitted

A semiconductor structure with improved backside metal contacts includes a plurality of source/drain regions within a field effect transistor. A backside metal contact is electrically connected to at least one source/drain region of the plurality of source/drain regions. The backside metal contact includes a first taper profile. The semiconductor structure further includes a backside power rail electrically connected to the at least one source/drain region through the backside metal contact. The backside power rail includes a second taper profile that is different from the first taper profile.